Image Sensor Stacked Capacitor Charge Storage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current image sensors face challenges in achieving efficient global shutter operation, leading to issues with charge storage and noise reduction, which affect the overall shutter efficiency.
Innovation Solution
The image sensor design incorporates a pixel separation structure with stacked capacitors and a charge storage layer, featuring a lower and upper capacitor structure connected through intermediate pad electrodes, enhancing charge storage and noise reduction capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single capacitor structure is used for charge storage, then the device complexity is low, but the charge storage capacity is insufficient for efficient global shutter operation
Solution Approach 1:
The capacitor is divided into multiple separate capacitor structures (first capacitor structure, second capacitor structure, third capacitor structure) instead of using a single capacitor. Each capacitor structure has its own electrodes and dielectric layer, allowing distributed charge storage across multiple components. This segmentation increases total charge storage capacity while maintaining manageable complexity through modular design
Solution Approach 2:
The patent transitions from a planar capacitor layout to a three-dimensional stacked configuration. Capacitor structures are arranged vertically with different height levels, where the first capacitor structure has a first height, the second capacitor structure has a second height, and the third capacitor structure has a third height. This vertical stacking in the third dimension increases storage capacity without expanding the lateral footprint, effectively resolving the contradiction between storage capacity and device complexity
2Reliability
If larger capacitor structures are used to increase charge storage capacity, then the charge storage capacity improves, but the pixel area available for photoelectric conversion decreases
Solution Approach 1:
The patent utilizes vertical stacking in the third dimension to increase capacitor volume and charge storage capacity. By arranging capacitor structures at different heights and stacking them vertically, the design achieves larger total capacitor volume without proportionally increasing the lateral pixel area occupation. This allows sufficient charge storage capacity while preserving more photoelectric conversion area in the horizontal plane
Solution Approach 2:
The capacitor structures are nested vertically within the pixel structure, with the first capacitor structure positioned at a first height level, the second capacitor structure at a second height level, and the third capacitor structure at a third height level. This nested vertical arrangement allows multiple capacitor volumes to occupy overlapping lateral spaces at different vertical levels, maximizing charge storage capacity within the constrained pixel area
3Reliability
If multiple capacitor structures are stacked vertically at different heights, then the charge storage capacity increases, but the manufacturing precision requirements increase
Solution Approach 1:
The manufacturing process is segmented into distinct stages for forming each capacitor structure at different height levels. Each capacitor structure can be formed, adjusted, and verified independently before proceeding to the next level. This segmented manufacturing approach reduces the cumulative alignment error that would occur in a single-step multi-layer process, thereby managing manufacturing precision requirements while achieving increased charge storage capacity through vertical stacking
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves shutter efficiency by effectively storing charges and reducing noise, enabling improved global shutter operation and pixel signal quality.
Implementation Method 1
a photoelectric conversion layer having a pixel separation structure defining a photoelectric conversion region
Implementation Method 2
a first charge storage layer comprising a first capacitor structure comprising a plurality of first storage electrodes for storing the charges read from the photoelectric conversion region; and a second charge storage layer bonded to the first charge storage layer, the second charge storage layer comprising a second capacitor structure comprising a plurality of second storage electrodes for storing the charges read from the photoelectric conversion region
Data Source
AI summary
An image sensor is provided and includes a photoelectric conversion layer, an integrated circuit layer, and a charge storage layer. The photoelectric conversion layer includes a pixel separation structure defining pixel regions, each including a photoelectric conversion region. The integrated circuit layer read charges from the photoelectric conversion regions. The charge storage layer includes a stacked capacitor for each of the pixel regions. The stacked capacitor includes a lower pad electrode, an intermediate pad electrode, an upper pad electrode, a contact plug connecting the upper pad electrode to the lower pad electrode, a first lower capacitor structure connected between the lower pad electrode and the intermediate pad electrode, and an upper capacitor structure connected between the intermediate pad electrode and the upper pad electrode. The upper capacitor structure is stacked on the lower capacitor structure to partially overlap the lower capacitor structure when viewed in plan view.


