Stacked Image Sensor Terminal Isolation With Shared Isolator Formation
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Solution Overview
Problem
The existing manufacturing process for solid-state imaging devices involves a complex structure and an increased number of steps due to the formation of insulating structure bodies around external coupling electrodes, which complicates the manufacturing of solid-state imaging devices.
Innovation Solution
A solid-state imaging device and method that includes a first semiconductor layer with a pixel region and a peripheral region, where a second semiconductor layer is stacked with a pixel circuit, an external terminal, a first isolator in the first semiconductor layer surrounding the outer periphery of an opening, and a second isolator in the second semiconductor layer, reducing the number of steps by utilizing existing pixel and circuit isolator structures to form the insulating structure body.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate steps are added to form a trench and insulating film around external coupling electrodes, then insulation performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the formation of isolators around external coupling electrodes with the existing pixel isolator formation process. By using the same etching and insulating film deposition steps that create pixel isolators, the patent simultaneously creates isolators for external coupling electrodes without adding separate manufacturing steps, thus maintaining insulation performance while reducing manufacturing complexity
Solution Approach 2:
The patent makes the pixel isolator formation process serve multiple functions: it creates isolators for pixels and simultaneously creates isolators for external coupling electrodes. This multi-functional approach allows a single manufacturing process to achieve what would traditionally require separate dedicated steps, reducing overall process complexity while maintaining reliable insulation
2Reliability
If separate steps are added to form insulating structure body, then insulation performance is improved, but number of manufacturing steps increases
Solution Approach 1:
The patent combines the formation of isolators around external coupling electrodes with the pixel isolator formation into a single integrated process. The same etching steps and insulating film deposition steps that create pixel isolators are used to create isolators for external coupling electrodes, eliminating the need for separate manufacturing steps and thereby improving manufacturing efficiency while maintaining insulation performance
Solution Approach 2:
The patent performs the formation of isolators around external coupling electrodes as part of the preliminary pixel isolator formation process. By anticipating the need for external coupling electrode isolators and incorporating their formation into the existing pixel isolator manufacturing sequence, the patent avoids adding subsequent separate steps, thus improving productivity
Data Source
AI summary
A solid-state imaging device includes a first semiconductor layer, a second semiconductor layer, and an external terminal. The first semiconductor layer has a pixel region in which a plurality of pixels is arranged, and a peripheral region provided around the pixel region. The second semiconductor layer is stacked on the first semiconductor layer, and is provided with a pixel circuit coupled to the pixels. The external terminal is provided in an opening that communicates with the second semiconductor layer from the peripheral region in the first semiconductor layer. A first isolator is provided in the first semiconductor layer within the peripheral region, and surrounds at least a portion of an outer periphery of the opening. A second isolator is provided in the second semiconductor layer within a region corresponding to the peripheral region, and surrounds at least a portion of the outer periphery of the opening.