High Conversion Gain Image Sensor With Tunable Floating Diffusion Capacitance
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Solution Overview
Problem
CMOS image sensors face challenges in achieving high conversion gain due to limitations in floating node capacitance, which affects low-light sensitivity and leads to pixel saturation in bright environments, especially as pixel sizes shrink and shared structure pixels become more common.
Innovation Solution
Incorporating a voltage boost circuit and a boost capacitor to increase the voltage swing at the floating diffusion node, allowing for a higher conversion gain without reducing the capacitance, thereby enhancing low-light sensitivity and preventing pixel saturation in bright conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the capacitance of the floating diffusion node is reduced to increase conversion gain, then low-light sensitivity is improved, but the pixel becomes prone to saturation in bright environments
Solution Approach 1:
The patent applies dynamics by making the floating diffusion node capacitance variable rather than fixed. A tuning circuit dynamically adjusts the capacitance value based on lighting conditions: using lower capacitance for high conversion gain in low-light scenarios, and higher capacitance to prevent saturation in bright environments. This resolves the contradiction by allowing the system to adapt its capacitance characteristic to different operating conditions.
Solution Approach 2:
The patent changes the capacitance parameter of the floating diffusion node from a fixed value to a variable value that can be tuned. By introducing a tuning circuit that modifies the capacitance parameter according to scene brightness, the system achieves high conversion gain when needed while avoiding saturation, thus resolving the fundamental trade-off between these two opposing requirements.
2Productivity
If pixel cell size is reduced to increase resolution, then more pixels fit in the sensor array, but the floating node capacitance cannot be made small enough for high conversion gain
Solution Approach 1:
The patent makes the capacitance dynamic and可调 (tunable) rather than fixed by geometry. Even with small pixel cell sizes that constrain physical capacitance, the tuning circuit can dynamically adjust the effective capacitance value to optimize conversion gain. This allows high resolution to be maintained while still achieving high conversion gain through active capacitance control.
Solution Approach 2:
The patent changes the capacitance parameter from being solely determined by physical geometry (which is constrained by small pixel size) to being controllable through an electronic tuning circuit. This parameter change enables the system to achieve high conversion gain in small pixels by electronically adjusting the capacitance value rather than relying on purely geometric factors.
3Reliability
If large transfer gates are used in large pixels to avoid image lag, then image lag is reduced, but the floating node capacitance increases reducing conversion gain
Solution Approach 1:
The patent applies dynamics by making the capacitance可调 (tunable) through a control circuit. This allows the system to compensate for the increased capacitance from large transfer gates by adjusting the capacitance parameter to optimize conversion gain. The tuning circuit dynamically balances the capacitance contribution from transfer gates against the need for high conversion gain, resolving the contradiction between preventing image lag and maintaining conversion gain.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a high conversion gain image sensor that maintains sensitivity in low-light conditions while preventing overexposure in bright environments, achieving a larger dynamic range with minimal tradeoff in conversion gain.
Implementation Method 1
the photodiode PD and node FD are reset to the supply voltage VDD by temporarily asserting the reset signal RST and the transfer signal TX. The image accumulation window (exposure period) is commenced by de-asserting the transfer signal TX and permitting incident light to charge the photodiode PD. As photogenerated electrons accumulate on the photodiode PD, its voltage decreases
Data Source
AI summary
An image sensor includes a photosensitive element, a reset circuit, an amplifier transistor, and a current source. The photosensitive element is coupled to generate an image charge in response to incident light and transfer the image charge to a circuit node. The reset circuit is coupled to selectively reset a voltage at the circuit node. The amplifier transistor includes a gate terminal responsive to the voltage at the circuit node. A current source is coupled between a high level power rail and a second terminal of the amplifier transistor.


