Collocated Imaging Arrays With DBH Bonding for Tight Detector Spacing
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Solution Overview
Problem
Indium-based hybridization processes in semiconductor-based imaging devices limit the yield of visible imagers and restrict the spacing between visible and infrared detectors due to process limitations and thermal expansion differences.
Innovation Solution
The implementation of a direct bond hybridization (DBH) structure between a silicon-based read out integrated circuit (ROIC) and both silicon and non-silicon detectors, allowing for closer proximity and reduced thermal mismatch between detectors, with indium-based hybridization used only for bonding the non-silicon detector to the DBH structure on top of the ROIC.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If indium-based hybridization is used to bond detectors to the ROIC, then the detectors can expand and contract with temperature changes, but the yield of visible imagers is limited and the spacing between visible and infrared imagers is restricted
Solution Approach 1:
The patent segments the bonding process into two distinct stages: first bonding the silicon-based visible detector to the ROIC using DBH structure, then bonding the non-silicon infrared detector to the DBH structure using indium-based hybridization. This segmentation allows each bonding process to be optimized independently, resolving the contradiction between thermal expansion compatibility and manufacturing yield.
Solution Approach 2:
The DBH structure serves as an intermediary between the ROIC and the non-silicon detector. It provides a stable bonding interface that accommodates thermal expansion differences while enabling close spacing between detectors. The intermediary DBH structure allows the indium-based hybridization to be applied only where needed for thermal compliance, without limiting the spacing or yield of the visible imager.
2Reliability
If indium-based hybridization is used to bond both visible and infrared detectors to the ROIC, then thermal expansion differences are accommodated, but the spacing between detectors cannot be reduced below process limitations
Solution Approach 1:
The patent applies different bonding qualities to different locations: DBH structure is used for the visible detector bonding where minimal spacing is needed, while indium-based hybridization is used locally for the non-silicon detector bonding where thermal expansion compliance is critical. This local differentiation allows detector spacing to be reduced to less than 1 to 2 pixels while maintaining thermal reliability.
3Length of stationary object
If DBH structure is used to bond both silicon and non-silicon detectors to the ROIC, then detector spacing is reduced and manufacturing efficiency is improved, but thermal expansion compatibility must be maintained
Solution Approach 1:
The DBH structure acts as an intermediary that enables close detector spacing while maintaining thermal reliability. By positioning the DBH structure between the ROIC and the non-silicon detector, and applying indium-based hybridization at this intermediary interface, the system achieves both reduced spacing and thermal expansion compatibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the yield of visible imagers and reduces the spacing between detectors to less than 1 to 2 pixels, improving thermal stability and manufacturing efficiency by using DBH for both silicon and non-silicon detectors.
Implementation Method 1
a direct bond hybridization (DBH) structure between the support structure and the silicon layer of the first detector and between the support structure and the non-silicon layer of the second detector
Implementation Method 2
The indium interconnect enables a compliant interconnection that allows the detectors to expand and/or contract with temperature changes without breaking the interconnection, even as detectors and ROIC have different coefficients of thermal expansion
Data Source
AI summary
A semiconductor-based imaging device and method of manufacture. A direct bond hybridization (DBH) structure is formed on a top surface of a read out integrated circuit (ROIC). A silicon-based detector is bonded to the ROIC via the DBH structure. A non-silicon-based detector is bonded to the DBH structure located on the top of the ROIC using indium-based hybridization.