Solid-State Imaging Device Anti-Reflective Layering
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Solution Overview
Problem
Conventional solid-state imaging devices face challenges in suppressing reflection on the surface of the semiconductor substrate and color mixing, which are exacerbated by the need for thicker films to reduce reflection.
Innovation Solution
A solid-state imaging device is designed with a semiconductor substrate and a layered structure comprising a first transparent dielectric layer, a semiconductor layer, and a second transparent dielectric layer, where the semiconductor layer is ½ or less of the total thickness of the dielectric layers, and the layers are optimized in thickness and material to minimize reflection and color mixing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the first film and second film are thickened to suppress reflection on the semiconductor substrate surface, then reflection is reduced, but color mixing increases
Solution Approach 1:
The patent divides the single thick dielectric film into multiple thin dielectric layers with alternating high and low refractive indices. This segmentation allows the total optical path length to be sufficient for reflection suppression while keeping individual layer thicknesses small enough to prevent color mixing between adjacent photoelectric conversion elements.
Solution Approach 2:
The patent uses a composite structure of multiple dielectric layers with different refractive indices (high refractive index layers and low refractive index layers) to achieve optimal optical performance. This composite approach enables simultaneous suppression of reflection and color mixing by leveraging the optical properties of different materials in a layered configuration.
2Object-affected harmful factors
If a single thick dielectric film is used to suppress reflection, then reflection is reduced, but the device complexity increases due to thickness requirements
Solution Approach 1:
The patent segments the thick dielectric film into multiple thin layers, which reduces the overall complexity by allowing thinner individual layers that are easier to manufacture and control. Each thin layer can be deposited with precise thickness control, simplifying the manufacturing process compared to depositing a single thick layer.
Solution Approach 2:
The patent transitions from a single-dimensional thick film approach to a multi-dimensional layered structure. By stacking multiple thin layers with alternating refractive indices, the solution achieves reflection suppression through the cumulative optical effect of multiple interfaces rather than relying on a single thick layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively suppresses reflection on the semiconductor substrate surface and reduces color mixing, thereby enhancing the sensitivity and performance of the solid-state imaging device.
Implementation Method 1
a plurality of layers including a first transparent dielectric layer, a semiconductor layer, and a second transparent dielectric layer in this order from the side of the semiconductor substrate... effectively suppresses reflection on the semiconductor substrate surface
Data Source
AI summary
A solid-state imaging device capable of suppressing reflection on a surface of a semiconductor substrate and color mixing is provided. The solid-state imaging device according to the present technology includes: a semiconductor substrate on which a photoelectric conversion element is formed; and a plurality of layers including a first transparent dielectric layer, a semiconductor layer, and a second transparent dielectric layer in this order from the side of the semiconductor substrate. With the solid-state imaging device according to the present technology, it is possible to provide a solid-state imaging device capable of suppressing reflection on a surface of a semiconductor substrate and color mixing.