Imaging Device i-Type Semiconductor Overlap Area Optimization
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Solution Overview
Problem
Current imaging devices using CMOS sensors face limitations in dynamic range and power consumption, which affect their ability to capture high-quality images efficiently, especially in portable devices where high power consumption shortens operational time.
Innovation Solution
The proposed imaging device incorporates a photoelectric conversion element with an i-type semiconductor and a circuit configuration that includes specific transistors and capacitors, optimizing the overlap area of the i-type semiconductor with metal or semiconductor materials to enhance detection sensitivity and dynamic range while reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the imaging device uses a conventional CMOS sensor configuration, then the device complexity is reduced and manufacturing is easier, but the dynamic range is limited and detection sensitivity is insufficient
Solution Approach 1:
The imaging device divides the pixel array into multiple regions with different circuit configurations. Specifically, some pixels use a first circuit configuration while others use a second circuit configuration, allowing different detection sensitivities for different imaging needs. This segmentation enables the system to achieve high detection sensitivity where needed without requiring all pixels to be complex
Solution Approach 2:
Different circuit configurations are applied to different spatial locations within the pixel array. The first circuit configuration is used in regions where high detection sensitivity is prioritized, while the second configuration is used in regions where other performance characteristics are more important. This local differentiation optimizes overall system performance
2Measurement precision
If the imaging device increases power consumption to improve imaging performance, then detection sensitivity and dynamic range improve, but the operational time of portable devices decreases
Solution Approach 1:
The imaging device applies high-performance circuit configurations only to the extent necessary for achieving the desired detection sensitivity. By using multiple circuit configurations selectively rather than uniformly across all pixels, the system achieves adequate detection sensitivity without the excessive power consumption that would result from making all pixels equally complex
Solution Approach 2:
The patent varies circuit configuration parameters across different pixel regions, including different transistor arrangements, capacitor configurations, and wiring layouts. These parameter changes allow optimization of detection sensitivity in specific regions while maintaining lower power consumption in other regions, achieving a balanced overall performance
3Measurement precision
If the overlap area of i-type semiconductor with metal or semiconductor materials is increased to improve detection sensitivity, then the dynamic range improves, but the area available for light reception decreases
Solution Approach 1:
The pixel structure is segmented into different functional zones with different overlap areas. Some pixels have larger overlap areas between the i-type semiconductor and metal/semiconductor materials to enhance detection sensitivity, while other pixels maintain smaller overlap areas to preserve light reception area. This segmentation allows the system to achieve high detection sensitivity without requiring all pixels to sacrifice light reception area
Solution Approach 2:
Different overlap area characteristics are applied to different spatial locations within the pixel array. Regions where detection sensitivity is prioritized have larger overlap areas, while regions where light reception is prioritized have smaller overlap areas. This local differentiation resolves the contradiction by allowing both large and small overlap areas to coexist in the same imaging device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the dynamic range and image quality of the imaging device, reduces power consumption, and increases productivity, enabling high-speed consecutive imaging with improved detection sensitivity and a wide temperature range.
Implementation Method 1
a photoelectric conversion element and a first circuit. The photoelectric conversion element includes an i-type semiconductor
Data Source
AI summary
An imaging device with high productivity and improved dynamic range is provided. The imaging device includes a pixel driver circuit and a photoelectric conversion element including a p-type semiconductor, an n-type semiconductor, and an i-type semiconductor. In a plan view, the total area of a part of the i-type semiconductor overlapped with neither a metal material nor a semiconductor material constituting the pixel driver circuit is preferably greater than or equal to 65%, more preferably greater than or equal to 80%, and still more preferably greater than or equal to 90% of the area of the whole i-type semiconductor. Plural photoelectric conversion elements are provided in the same semiconductor, whereby a process for separating the photoelectric conversion elements can be omitted. The i-type semiconductors in the plural photoelectric conversion elements are separated from each other by the p-type semiconductor or the n-type semiconductor.