Solid-State Imaging Device Photoelectric Conversion Layer Protrusion

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Solution Overview

Problem

In the manufacturing of solid-state imaging devices, forming a satisfactory photoelectric conversion layer is challenging due to the risk of damage from high-temperature annealing processes, especially when the layer is formed before annealing is completed.

Innovation Solution

The proposed solution involves a solid-state imaging device with a photoelectric conversion portion that includes a first electrode, a photoelectric conversion layer electrically connected to the first electrode, and a second electrode on the light incidence side. The photoelectric conversion layer has a protrusion region that protrudes from the second electrode, allowing for the formation of the layer after semiconductor processes are completed, thus avoiding damage from annealing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the photoelectric conversion layer is formed before high-temperature annealing, then the manufacturing process can be completed in sequence, but the photoelectric conversion layer may be damaged by the annealing process

Engineering Contradiction:

Improvemanufacturing process sequenceVSAvoidphotoelectric conversion layer integrity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by forming the photoelectric conversion layer after the annealing process is completed, rather than before. This reverses the conventional sequence and ensures that the organic photoelectric conversion layer is not exposed to high-temperature annealing that would cause damage. The layer is formed in a later stage when the temperature conditions are suitable for organic materials.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If the photoelectric conversion layer is formed after semiconductor process completion, then damage from annealing is avoided, but the manufacturing timeline is extended

Engineering Contradiction:

Improvephotoelectric conversion layer integrityVSAvoidmanufacturing cycle time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent applies dynamics by making the photoelectric conversion layer formation a flexible step that occurs after annealing completion. The manufacturing process is designed to accommodate this sequence change, where the organic layer formation is dynamically positioned in the process timeline after high-temperature steps are completed, optimizing both protection and efficiency.

Inventive Principle:

Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the formation of a satisfactory photoelectric conversion layer without damage, improving the manufacturing process and resulting element characteristics of solid-state imaging devices.

Implementation Method 1

an organic photoelectric conversion layer performing photoelectric conversion of incident light

Methodology Applied

Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS12238947B2Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic equipment

Publication Date: 2025.02.25 SONY SEMICON SOLUTIONS CORP

AI summary

A solid-state imaging device (1) according to the present disclosure includes a photoelectric conversion portion (30) including a first electrode (31), a photoelectric conversion layer (34) electrically connected to the first electrode (31), and a second electrode (35) provided on a surface on a light incidence side of the photoelectric conversion layer (34). The photoelectric conversion layer (34) has a protrusion region (34a) that protrudes from the second electrode (35) when seen in a plan view.