Imaging Device Oxide Semiconductor Pixel Circuit Low Power
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Solution Overview
Problem
Current imaging devices face challenges in capturing high-quality images under low illuminance conditions, achieving a wide dynamic range, high resolution, and low power consumption, while also being cost-effective and suitable for a wide temperature range and high-speed operation.
Innovation Solution
The development of an imaging device incorporating a pixel circuit with an oxide semiconductor transistor, a silicon-based photodiode, and a peripheral circuit with both oxide and silicon semiconductors, which allows for improved low-light sensitivity, high integration, and reduced power consumption, along with a novel structure that enhances aperture ratio and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If oxide semiconductor transistors are used in imaging devices, then low power consumption and high reliability are improved, but manufacturing complexity increases
Solution Approach 1:
The imaging device is divided into two distinct circuit regions: a pixel region using oxide semiconductor transistors for low-power operation, and a peripheral circuit region using silicon-based transistors for high-speed processing. This segmentation allows each region to use the most appropriate semiconductor material for its specific function, reducing overall system power consumption while maintaining manufacturing feasibility through standardized fabrication processes.
Solution Approach 2:
The patent utilizes the different electrical characteristics of oxide semiconductor and silicon-based transistors by assigning them to different functional regions. Oxide semiconductor transistors operate at lower power consumption levels suitable for pixel circuits, while silicon-based transistors provide the high-speed performance needed for peripheral circuits, optimizing the overall device performance through parameter-based material selection.
2Productivity
If higher integration is achieved, then device functionality is improved, but manufacturing precision requirements increase
Solution Approach 1:
The imaging device structure is segmented into a pixel region and a peripheral circuit region, with each region using semiconductor materials optimized for its specific function. This segmentation enables higher integration by allowing different manufacturing precision requirements to be applied to different regions, thereby achieving high functionality without uniformly increasing manufacturing precision requirements across the entire device.
3Illumination intensity
If aperture ratio is increased, then light sensitivity is improved, but device area increases
Solution Approach 1:
The patent changes the electrical and optical parameters of the transistor structures in the pixel region to achieve higher light sensitivity. By optimizing the transistor configuration and using oxide semiconductor materials with superior electrical characteristics, the device achieves enhanced aperture ratio and light sensitivity while maintaining a compact form factor suitable for modern imaging applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The imaging device achieves high-quality image capture under low illuminance, offers a wide dynamic range, and operates efficiently with low power consumption, making it suitable for various environments and applications.
Implementation Method 1
a photoelectric conversion element formed using silicon
Data Source
AI summary
An imaging device which is capable of taking images with high quality and can be manufactured at low cost is provided. A first circuit includes a first transistor and a second transistor and a second circuit includes a third transistor and a photodiode. The first transistor and the third transistor are each an n-channel transistor including an oxide semiconductor layer as an active layer, and the second transistor is a p-channel transistor including an active region in a silicon substrate. The photodiode is provided in the silicon substrate. A region in which the first transistor and the second transistor overlap each other with an insulating layer positioned therebetween is provided. A region in which the third transistor and the photodiode overlap each other with the insulating layer positioned therebetween is provided.