Solid-state imaging device phase difference pixel shielding

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Solution Overview

Problem

The manufacturing difficulty of phase difference pixels in solid-state imaging devices increases due to the need for larger on-chip lenses and different driving methods compared to normal pixels, especially when sharing photoelectric conversion elements.

Innovation Solution

A solid-state imaging device with a pixel array unit where neighboring pixels of the same color are regularly arrayed, and light-shielded pixel groups are shielded in a specific direction, allowing for phase difference detection without altering the on-chip lens size or driving method.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple photoelectric conversion elements are provided for one on-chip lens in shared pixels, then phase difference detection capability is improved, but manufacturing difficulty increases

Engineering Contradiction:
Improvephase difference detection capabilityVSAvoidmanufacturing difficulty
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The pixel array is divided into distinct regions: normal pixels for general imaging and light-shielded pixels for phase difference detection. This segmentation allows each region to be optimized independently, with light-shielded pixels using a single photoelectric conversion element per on-chip lens, thereby simplifying manufacturing while maintaining phase difference detection capability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different structural qualities are applied to different regions of the pixel array. Normal pixels have a standard structure with one photodiode per lens, while light-shielded pixels have a modified structure with light shielding portions and reduced photoelectric conversion elements. This local differentiation enables phase difference detection without requiring all pixels to have complex multi-element structures.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If the size of on-chip lens is increased to accommodate multiple photoelectric conversion elements, then phase difference detection is enabled, but device complexity increases

Engineering Contradiction:
Improvephase difference detection functionVSAvoidon-chip lens size variation
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The pixel array is segmented into normal pixels and light-shielded pixels with different functions. Light-shielded pixels use a single photodiode with light shielding portions to block specific light paths, enabling phase difference detection without requiring larger on-chip lenses or multiple photoelectric conversion elements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Instead of changing the size of on-chip lenses, the patent changes the light transmission parameters by introducing light shielding portions that block specific directions of light. This parameter change approach enables phase difference detection while maintaining uniform on-chip lens dimensions across all pixels.

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If driving method is changed for phase difference pixels, then phase difference detection is achieved, but manufacturing and operational complexity increases

Engineering Contradiction:
Improvephase difference detection capabilityVSAvoiddriving method complexity
Core Design Contradiction:
Adaptability or versatilityVSEase of operation

Solution Approach 1:

The pixel array is divided into normal pixels and light-shielded pixels with distinct functions. Light-shielded pixels use a simplified driving method where light shielding portions physically block light paths, eliminating the need for complex temporal switching or multiple readout channels required in traditional phase difference detection schemes.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces the manufacturing complexity of phase difference pixels by maintaining the same on-chip lens size and driving method as normal pixels, enabling efficient phase difference detection.

Implementation Method 1

one photodiode 112 is provided for one on-chip lens 111

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS11924566B2Solid-state imaging device and electronic device
Publication Date: 2024.03.05 SONY SEMICON SOLUTIONS CORP
  • US11924566B2 patent drawing
  • US11924566B2 patent drawing
  • US11924566B2 patent drawing

AI summary

The present disclosure relates to a solid-state imaging device and an electronic device that can be provided with phase difference pixels with a lower degree of difficulty in manufacturing.Provided is a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, in which the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed, and among the plurality of pixel groups arrayed in the array pattern, pixels configuring a light-shielded pixel group are shielded in an identical direction side from light, the light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light. The present technology can be applied to, for example, a CMOS image sensor including pixels for phase difference detection.