Solid-State Imaging Element With Prism Color Splitting for Six-Band Capture
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Solution Overview
Problem
Current solid-state imaging elements are limited in improving image quality as they can only photoelectrically convert light in three different wavelength regions, leaving room for further enhancement.
Innovation Solution
A solid-state imaging element is designed with a matrix of photoelectric conversion units, an on-chip lens, a prism portion, and color splitters, where the on-chip lens is positioned on the light incident side of the semiconductor layer, and the prism and color splitters are placed between the lens and the photoelectric conversion units to efficiently split and direct light across multiple wavelength regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional solid-state imaging elements are used with three wavelength regions, then the structure is simple, but image quality is limited
Solution Approach 1:
The imaging element is segmented into multiple wavelength region groups (first, second, third, fourth groups), each dedicated to specific wavelength ranges. This segmentation allows simultaneous capture of multiple wavelength regions with specialized photoelectric conversion units, improving image quality through spectral differentiation while maintaining organized structural complexity
Solution Approach 2:
The patent extends the conventional three-wavelength (RGB) approach by adding more wavelength regions beyond the traditional visible spectrum. This dimensional expansion in spectral coverage enables capture of ultraviolet, infrared, and other non-visible wavelengths, significantly enhancing image quality and information content while requiring a more complex multi-group structure
2Quantity of substance
If only three wavelength regions are captured, then the device complexity is low, but the information content is limited
Solution Approach 1:
The solid-state imaging element achieves multi-functionality by incorporating photoelectric conversion units that can detect multiple wavelength regions. The first photoelectric conversion units capture both first and second wavelength regions, while second photoelectric conversion units capture both third and fourth wavelength regions, allowing a single imaging element to perform multiple spectral detection functions simultaneously
Solution Approach 2:
The imaging element is divided into four distinct wavelength region groups, each optimized for specific spectral ranges. This segmentation enables comprehensive capture of ultraviolet, visible, and infrared wavelengths, significantly increasing the quantity of spectral information obtained while organizing the complex photoelectric conversion unit configuration into manageable functional groups
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for the efficient photoelectric conversion of light in six different wavelength regions, significantly improving image quality by ensuring that each photodiode receives the appropriate wavelengths, thereby enhancing the overall imaging performance.
Implementation Method 1
an on-chip lens, which is disposed further on a light incident side than the semiconductor layer to be shared by the plurality of photoelectric conversion units
Implementation Method 2
The prism portion is disposed between the on-chip lens and the plurality of photoelectric conversion units
Implementation Method 3
The prism portion is disposed between the on-chip lens and the plurality of photoelectric conversion units
Implementation Method 4
The plurality of color splitters are disposed between the prism portion and the plurality of photoelectric conversion units
Implementation Method 5
a plurality of photoelectric conversion units disposed side by side in a matrix form in a semiconductor layer
Data Source
AI summary
A solid-state imaging element (1) according to the present disclosure includes a plurality of photoelectric conversion units, an on-chip lens, a prism portion (P), and a plurality of color splitters CS1. The plurality of photoelectric conversion units is disposed side by side in a matrix form in a semiconductor layer (20). The on-chip lens is disposed further on a light incident side than the semiconductor layer (20) to be shared by the plurality of photoelectric conversion units. The prism portion (P) is disposed between the on-chip lens and the plurality of photoelectric conversion units. The plurality of color splitters (CS1) are disposed between the prism portion (P) and the plurality of photoelectric conversion units.