Imaging Panel Semiconductor Layer Dopant Gradient for Leakage Current
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Solution Overview
Problem
In X-ray imaging devices, the semiconductor layer in contact with the anode electrode of photoelectric conversion elements has a low extinction coefficient, leading to improved quantum efficiency but increased leakage current due to smaller dopant concentration.
Innovation Solution
A photoelectric conversion element configuration with a first semiconductor layer having a lower dopant concentration and a second semiconductor layer with a higher dopant concentration closer to the anode electrode, reducing leakage current while maintaining high quantum efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor layer has a small extinction coefficient, then quantum efficiency is improved, but leakage current increases due to smaller dopant concentration
Solution Approach 1:
The semiconductor layer is divided into multiple layers with different dopant concentrations. The first semiconductor layer has a first dopant concentration and the second semiconductor layer has a second dopant concentration higher than the first, allowing each layer to optimize for its specific function while working together as a unified structure
Solution Approach 2:
Different regions of the semiconductor layer are assigned different dopant concentrations based on their functional requirements. The region closer to the anode electrode (second semiconductor layer) has higher dopant concentration to suppress leakage current, while the first semiconductor layer maintains lower dopant concentration for optimal quantum efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively suppresses leakage current and enhances quantum efficiency by optimizing the dopant concentration gradient in the semiconductor layers.
Implementation Method 1
p-intrinsic-n (PIN) photodiodes are used as photoelectric conversion elements, and the PIN photodiodes convert emitted X-rays into electrical charges
Implementation Method 2
quantum efficiency is improved in a case that the semiconductor layer has a small extinction coefficient in an optical sense
Data Source
AI summary
An imaging panel includes a photoelectric conversion element disposed on a substrate. The photoelectric conversion element includes a cathode electrode, a first semiconductor layer having a first conductive type, the first semiconductor layer being in contact with the cathode electrode, a second semiconductor layer having a second conductive type different from the first conductive type, the second semiconductor layer being joined to the first semiconductor layer, and an anode electrode in contact with the second semiconductor layer. The second semiconductor layer has a greater extinction coefficient as closer to the anode electrode.