X-ray Imaging Panel Protrusion Reduces Plasma Damage
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Solution Overview
Problem
In X-ray imaging devices, the dry etching process for PIN photodiodes leads to plasma damage at the interface between the p-type and intrinsic amorphous semiconductor layers, resulting in increased off-leakage current.
Innovation Solution
The imaging panel design includes a photoelectric conversion layer with a protrusion portion where the upper end of the second amorphous semiconductor layer protrudes beyond the intrinsic amorphous semiconductor layer, reducing plasma damage during dry etching and minimizing off-leakage current, and an upper electrode protection film covers the upper electrode to prevent metal ion adherence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching is used to form PIN photodiodes, then the photoelectric conversion layer can be precisely patterned, but plasma damage occurs at the interface between the p-type and intrinsic amorphous semiconductor layers, causing off-leakage current to increase
Solution Approach 1:
The patent applies a protective film to the photoelectric conversion layer before the dry etching process. This preliminary protective action prevents plasma damage to the semiconductor layer interfaces during etching, thereby reducing off-leakage current while still allowing precise patterning to be achieved
2Shape
If the photoelectric conversion layer is fully etched for patterning, then the pixel structure can be clearly defined, but the interface between the p-type and intrinsic amorphous semiconductor layers suffers plasma damage
Solution Approach 1:
The patent introduces a protective film as an intermediary layer between the photoelectric conversion layer and the etching environment. This mediator allows the dry etching process to proceed with full patterning capability while shielding the semiconductor interfaces from direct plasma exposure, thus preventing damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively decreases off-leakage current in the photoelectric conversion layer by preventing plasma damage and metal ion adherence, enhancing the imaging panel's performance.
Implementation Method 1
a photoelectric conversion layer that is provided on the insulating film, and converts the scintillation light into charges
Implementation Method 2
p-intrinsic-n (PIN) photodiodes are used as photoelectric conversion elements, and irradiated X-rays are converted into charges by the PIN photodiodes
Data Source
AI summary
Provided is an X-ray imaging panel in which off-leakage current can be decreased, and a method for producing the same. An imaging panel includes a photodiode that includes a lower electrode, a photoelectric conversion layer 15 provided on the lower electrode, and an upper electrode 14b provided on the photoelectric conversion layer 15. The photoelectric conversion layer 15 includes a first amorphous semiconductor layer 151, an intrinsic amorphous semiconductor layer 152, and a second amorphous semiconductor layer 153. In the photoelectric conversion layer 15, an upper end portion 1531 of the second amorphous semiconductor layer 153 has a protrusion portion 15a that protrudes toward an outer side of the photoelectric conversion layer 15 with respect to an upper end portion 1521 of the intrinsic amorphous semiconductor layer 152.