Imaging Sensor Voltage Switching for Fast Readout and Low Power
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Solution Overview
Problem
The existing imaging apparatus struggles to achieve high-definition image capturing and distance measurement simultaneously while maintaining low power consumption due to the need for high control voltages to read out signal charge quickly.
Innovation Solution
The imaging apparatus employs a configuration with a first semiconductor layer, unit cells, and a driving circuit that supplies operation mode-specific voltages to transfer transistors, allowing for alternating conductivity states of the transistors to optimize image quality and distance measurement with reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high control voltages are applied to transfer transistors to achieve high-speed readout of signal charge, then distance measurement capability is improved, but power consumption increases
Solution Approach 1:
The patent implements dynamic voltage control of transfer transistors by switching between a first voltage level during imaging mode and a second voltage level during distance measurement mode. This dynamic adjustment allows the system to optimize transistor operation for each specific function, achieving high-speed readout only when needed for distance measurement while reducing power consumption during imaging operations.
Solution Approach 2:
The patent changes the voltage parameter of transfer transistors based on operation mode. During imaging, a first voltage level is applied to maintain appropriate transistor operation for charge transfer, while during distance measurement, a second voltage level is applied to enable high-speed readout. This parameter change resolves the contradiction by providing high speed only when required while minimizing power consumption during imaging.
2Manufacturing precision
If deep electric potential is applied to photodiode to achieve high saturation during imaging, then image quality is improved, but the ability to read out signal charge at high speed deteriorates
Solution Approach 1:
The patent dynamically adjusts the electric potential of the photodiode based on the operation mode. During imaging mode, a first electric potential is applied to achieve high saturation and optimal image quality. During distance measurement mode, a second electric potential is applied to enable high-speed signal charge readout. This dynamic switching resolves the contradiction by optimizing the photodiode potential for the current operational requirement.
Solution Approach 2:
The patent changes the electric potential parameter of the photodiode according to operation mode. The first electric potential level is used during imaging to achieve high saturation for quality images, while the second electric potential level is used during distance measurement to facilitate high-speed charge readout. This parameter adjustment strategy allows the system to achieve both high image quality and high readout speed at different times.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-definition imaging and accurate distance measurement with low power consumption by optimizing voltage supply to the semiconductor layer and control terminals based on operation modes.
Implementation Method 1
each of the n pixels includes: a photoelectric converter
Data Source
AI summary
An imaging apparatus includes: a first semiconductor layer; a unit cell that is provided in the first semiconductor layer and includes n pixels, where n is a natural number, and a charge accumulator in which charge generated in the n pixels accumulates; and a driving circuit. Each of the n pixels includes: a photoelectric converter; a first transfer transistor that includes a first control terminal; and a second transfer transistor that includes a second control terminal, and the driving circuit supplies a voltage corresponding to an operation mode selected from among a plurality of operation modes to the first semiconductor layer, the first control terminal, or the second control terminal.