In-Memory Neural Memory Architecture Using Charge-Sharing Lanes

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Solution Overview

Problem

Current neural networks executed by simulation software face increased complexity and processing time as network size grows, and existing in-memory computing (IMC) technologies lack efficient high-speed parallel access with low power consumption.

Innovation Solution

An IMC memory device utilizing a digital DAC-bias loop to provide a constant current source and voltage bias, eliminating the need for an analog bandgap circuit, and employing a charge sharing mechanism to distribute charge among bit lines with adjustable ratios for efficient weight value processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If simulation software is used to execute neural networks, then flexibility and ease of implementation are improved, but processing time and complexity increase as network size grows

Engineering Contradiction:
Improveease of implementationVSAvoidprocessing time
Core Design Contradiction:
Ease of operationVSLoss of time

Solution Approach 1:

The patent replaces traditional von Neumann architecture with a memcomputing system where memory and processing are unified. The core innovation is using a crossbar array where memory cells store synaptic weights and input signals simultaneously, enabling parallel matrix multiplication through physical charge distribution rather than sequential computational steps. This substitution of computational mechanics with physical field interactions dramatically reduces processing time while maintaining ease of operation through high-level programming interfaces.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Speed

If in-memory computing is implemented, then data access speed is improved, but power consumption and circuit complexity increase

Engineering Contradiction:
Improvedata access speedVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent employs multiple parameter optimization techniques: (1) Uses non-volatile memory cells that retain data without continuous power, eliminating standby power consumption; (2) Implements dynamic voltage and frequency scaling in the control logic to match operational intensity with power supply; (3) Optimizes the crossbar array dimensions and cell density to balance access speed with total device power consumption; (4) Uses charge-based computation that consumes energy only during actual compute operations rather than continuous clock cycles.

Inventive Principle:
Principle #35Parameter changes

3Speed

If in-memory computing is implemented, then data access speed is improved, but device complexity increases

Engineering Contradiction:
Improvedata access speedVSAvoidcircuit complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent divides the neural network computation into segmented operations: (1) Weight storage in memory cells separated from (2) input signal application through word lines, and (3) result readout through bit lines. The crossbar array itself is segmented into multiple banks that can be independently controlled. This segmentation allows each subsystem to be optimized independently and simplifies the control logic by breaking down complex operations into manageable stages, thereby reducing overall device complexity while maintaining high-speed parallel access.

Inventive Principle:
Principle #1Segmentation

4Productivity

If parallel processing is increased, then processing efficiency is improved, but control complexity and synchronization requirements increase

Engineering Contradiction:
Improveprocessing efficiencyVSAvoidcontrol complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent implements self-service mechanisms in the crossbar array where: (1) Memory cells automatically perform analog multiplication of weight and input values through charge coupling; (2) Bit lines automatically sum the results through capacitive integration; (3) The physical layout inherently provides synchronization through simultaneous signal propagation across the array. This eliminates the need for complex external control logic to coordinate parallel operations, as the hardware itself performs the coordination through its physical properties, thereby maintaining high processing efficiency while minimizing control complexity.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables high-speed parallel access and low power consumption in IMC memory devices, enhancing processing efficiency for artificial neural networks by eliminating the need for analog bandgap circuits and optimizing charge distribution among bit lines.

Implementation Method 1

analog bandgap circuit may be replaced by a digital DAC-bias loop

Methodology Applied
Scientific EffectDigital-to-Analog Conversion:

Implementation Method 2

The input circuit in each lane charges a predefined first bit line with a default amount of charge proportional to an input synapse value

Methodology Applied
Scientific EffectCharge storage in capacitor: Capacitance

Implementation Method 3

distributes the default amount of charge to the other second bit lines with a predefined ratio based on a constant current

Methodology Applied
Scientific EffectCharge distribution: Electrical Resistance

Implementation Method 4

convert an average voltage at the accumulate line into a digital value

Methodology Applied
Scientific EffectVoltage-to-digital conversion:

Data Source

PatentUS11379714B2Architecture of in-memory computing memory device for use in artificial neuron
Publication Date: 2022.07.05 BRITISH CAYMAN ISLANDS INTELLIGO TECH INC
  • US11379714B2 patent drawing
  • US11379714B2 patent drawing
  • US11379714B2 patent drawing

AI summary

An in-memory computing memory device is disclosed. The memory device comprises an array of memory cells, a plurality of word lines, a plurality of bit lines, (M+1) input circuits, a wordline driver and an evaluation circuitry. The array is divided into (M+1) lanes and each lane comprises P memory cell columns and an input circuit. The input circuit in each lane charges a predefined bit line with a default amount of charge proportional to an input synapse value and then distributes the default amount of charge to the other second bit lines with a predefined ratio based on a constant current. The evaluation circuitry couples a selected number of the bit lines to an accumulate line and convert an average voltage at the accumulate line into a digital value in response to a set of (M+1) input synapse values and the activated word line.