Implantable Device Non-Volatile Memory Direct Execution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current implantable medical devices (IMDs) face limitations in upgrading therapy parameters and software post-manufacture or post-implantation due to the need for large amounts of RAM, ROM, indirect execution, and error checking, which complicates the system and risks data loss from power fluctuations.
Innovation Solution
An IMD with non-volatile memory that allows direct execution of instructions, enabling the generation of erase and write control signals to modify its operation wirelessly, eliminating the need for large RAM or ROM and reducing complexity by allowing direct execution from non-volatile memory.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If volatile RAM is used for program storage, then the device can be reprogrammed after implantation, but power fluctuations cause loss of programming and therapy parameters
Solution Approach 1:
The patent combines the reprogrammability of volatile RAM with the data retention capability of non-volatile memory by implementing a unified non-volatile memory system that can be electrically erased and reprogrammed, eliminating the need for separate volatile and non-volatile memory components while maintaining both reprogrammability and data retention.
Solution Approach 2:
The patent changes the fundamental parameter of memory volatility by using non-volatile memory technology that allows electrical erasure and reprogramming, transforming the memory from a volatile state (losing data on power loss) to a non-volatile state (retaining data without power) while maintaining reprogrammability.
2Reliability
If error checking circuitry is added to prevent execution of altered instructions, then data integrity is improved, but device complexity increases significantly
Solution Approach 1:
The patent removes the need for separate error checking circuitry by using non-volatile memory that inherently prevents data corruption from power fluctuations, extracting the error prevention function from the execution system and embedding it in the memory technology itself.
3Quantity of substance
If both RAM and ROM are used with sufficient size to store executable program, then program storage capacity is adequate, but the processor cannot directly execute the program and virtual memory design adds complexity
Solution Approach 1:
The patent removes the need for complex virtual memory systems and the distinction between RAM and ROM by using non-volatile memory that can be directly executed by the processor, extracting the execution capability from the traditional RAM and eliminating the need for memory mapping systems.
Solution Approach 2:
The non-volatile memory in the patent serves multiple functions simultaneously: it provides long-term data retention like ROM, allows electrical erasure and reprogramming like RAM, and can be directly executed by the processor, combining the capabilities of both memory types into a single universal memory system.
4Reliability
If FRAM is used for program backup, then non-volatility is achieved, but repeated read access causes the FRAM to lose its non-volatility
Solution Approach 1:
The patent changes the fundamental parameter of read durability by using non-volatile memory technology that can withstand repeated read access without degrading its non-volatility property, transforming the memory from a state where reads degrade performance to a state where reads do not affect data retention capability.
Data Source
Figure 1
Figure 2~4
Figure 3
AI summary
A device comprises a stimulus generator comprising an instruction processor. The stimulus generator is configured to deliver stimuli to a biological tissue. The device also comprises a non-volatile memory for storing instructions directly executable by the instruction processor, the instructions controlling, at least in part, the operation of the device. The instruction processor generates an erase control signal to erase at least a segment of the non-volatile memory and a write control signal to write one or more new instructions to at least a segment of the non-volatile memory, thereby modifying the operation of the device.