Imide Complex for Niobium Tantalum Thin Film Vapor Pressure
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Solution Overview
Problem
Current methods for forming thin films in semiconductor devices, such as CVD and ALD, face challenges with materials like Nb(NtPe)(NMe2)3 and Ta(NtBu)(NEt2)3, which have low vapor pressure and are not suitable for producing uniform thin films on complex three-dimensional structures due to their solid state and poor volatility.
Innovation Solution
Development of an imide complex represented by the general formula M1(NR1)(OR2)3, where M1 is niobium or tantalum, R1 is an alkyl group, and R2 is an alkyl group, which is synthesized through specific reaction methods involving halogenated compounds, alkali metal alkoxides, and amines, allowing for better vaporization and deposition on substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If amide compounds or pentaalkoxides are used as raw materials for CVD or ALD methods, then the material can be supplied as a liquid, but the vapor pressure is low making it difficult to form uniform thin films
Solution Approach 1:
The patent modifies the chemical structure of the raw material by replacing amide or alkoxide groups with imide groups and specific alkoxides, changing the physical and chemical parameters of the compound. This structural modification results in significantly improved vapor pressure while maintaining liquid state at room temperature, enabling effective CVD and ALD processes.
Solution Approach 2:
The patent creates a composite molecular structure combining imide groups with specific alkyl groups (R1 and R2) and metal centers (Nb or Ta). This composite structure achieves optimal balance between volatility and reactivity, solving the contradiction between liquid state ease of handling and sufficient vapor pressure for film deposition.
2Stability of the object's composition
If solid materials like Nb(NtPe)(NMe2)3 are used, then thermal stability may be maintained, but vapor pressure is too low for effective vaporization and film deposition
Solution Approach 1:
The patent changes the physical state parameter from solid to liquid by modifying the molecular structure. The imide complex maintains thermal stability through its chemical structure while achieving liquid state with appropriate vapor pressure, eliminating the need for high-temperature vaporization and improving deposition quality.
3Ease of manufacture
If PVD method is used for thin film formation, then the process is simple, but uniform film formation on complicated three-dimensional structures is difficult
Solution Approach 1:
The patent replaces the mechanical physical vapor deposition process with a chemical vapor deposition or atomic layer deposition process using the improved imide complex. This substitution allows vaporized precursor to reach all surfaces of three-dimensional structures uniformly through chemical reactions, achieving both good step coverage and film uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The imide complex exhibits good vapor pressure and thermal stability, enabling the production of uniform niobium or tantalum-containing thin films using CVD or ALD methods, suitable for complex three-dimensional structures, thereby addressing the limitations of previous materials.
Implementation Method 1
a material having appropriate vapor pressure and thermal stability and capable of vaporizing in a stable supply amount
Implementation Method 2
decomposing a raw material adsorbed on a substrate surface to deposit a film
Data Source
AI summary
Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.