Imide-Based Organic Film Materials for Corrosion-Resistant Patterning

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in achieving high integration and processing speed due to limitations in miniaturization, substrate corrosion under high temperature conditions, and insufficient film formation properties of organic underlayer films, leading to reduced yields and pattern collapse.

Innovation Solution

A compound with an imide group structure, capable of curing under inert gas or air conditions, provides an organic film with high heat resistance, excellent adhesion, and superior filling and planarizing properties, forming an organic underlayer film that prevents substrate corrosion and maintains film integrity during thermal processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional organic resin-containing composition is used to form organic underlayer film, then the film formation process is simple, but the film lacks sufficient heat resistance and causes substrate corrosion under high temperature conditions

Engineering Contradiction:
Improveheat resistanceVSAvoidsubstrate corrosion
Core Design Contradiction:
TemperatureVSObject-affected harmful factors

Solution Approach 1:

The patent changes the chemical composition parameters of the organic film material by incorporating specific compounds (compounds 1-10) with functional groups that provide heat resistance. The composition is formulated to undergo controlled thermal reactions that form a protective, corrosion-resistant film structure capable of withstanding high temperature processing conditions without corroding the substrate.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite organic film material combining multiple functional components: the base organic resin, the heat-resistant compound (1-10), and optional crosslinking agents or additives. This composite structure provides both the film-forming properties of the resin and the heat resistance/corrosion protection of the functional compound, solving the contradiction between simplicity and performance.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If the resist upper layer film has large film thickness to fill stepped substrate, then filling property is improved, but pattern collapse occurs and pattern profile deteriorates

Engineering Contradiction:
Improvepattern formation marginVSAvoidpattern collapse
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent introduces an organic underlayer film as an intermediary between the stepped substrate and the resist upper layer film. This underlayer film provides a planarized surface that allows the use of thinner resist films while still achieving complete filling of the stepped regions. The underlayer acts as a mediator that decouples the filling function from the resist film thickness, preventing pattern collapse.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent segments the film formation process into two distinct layers: the organic underlayer film (providing filling and planarization) and the resist upper layer film (providing pattern definition). This segmentation allows each layer to be optimized independently - the underlayer can be thicker to ensure filling, while the resist layer remains thin enough to avoid pattern collapse.

Inventive Principle:
Principle #1Segmentation

3Ease of manufacture

If substrate is processed in air at high temperature, then film formation is straightforward, but substrate corrosion occurs reducing yield

Engineering Contradiction:
Improvefilm formation processVSAvoidsubstrate yield
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent converts the potentially harmful effect of high temperature processing into a beneficial outcome by designing the organic film composition to undergo controlled thermal curing or crosslinking reactions. The heat that would normally cause substrate corrosion is instead utilized to form a more stable, crosslinked film structure that provides protection. The harmful thermal energy is transformed into a beneficial film-strengthening mechanism.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent creates a chemically inert or protective environment within the organic film composition itself, using compounds that do not react with the substrate even at high temperatures. The film composition acts as an inert barrier layer, preventing direct contact between the substrate and any potentially corrosive atmospheric components during high temperature processing.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The imide-based organic film material ensures high yield and stability in semiconductor device manufacturing by preventing substrate corrosion, maintaining film thickness, and enabling precise pattern transfer, even under high temperature conditions.

Implementation Method 1

A compound with an imide group structure, capable of curing under inert gas or air conditions

Methodology Applied
Scientific EffectCuring:

Implementation Method 2

heating the substrate to be processed coated with the material for forming an organic film under an inert gas atmosphere at a temperature of 50°C or higher to 600°C or lower

Methodology Applied
Scientific EffectThermal processing: Heat Treatment

Implementation Method 3

excellent adhesion, and superior filling and planarizing properties, forming an organic underlayer film that prevents substrate corrosion

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentEP3725773B1Compounds and materials for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process
Publication Date: 2025.09.24 SHIN ETSU CHEMICAL CO LTD
  • EP3725773B1 patent drawingFigure 1~2(F)
  • EP3725773B1 patent drawingFigure 3(G)~3(I)
  • EP3725773B1 patent drawingFigure 4(J)~4(K)

AI summary

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent,          W1-(-X1)n1     (1A) noting that in the general formula (1B), when W1 represents R1 does not represent any of