Imide Organic Underlayer Film for Inert-Gas Planarization
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Solution Overview
Problem
Existing organic film materials for semiconductor devices lack sufficient heat resistance, adhesion to substrates, and planarizing properties, especially under inert gas conditions, leading to substrate corrosion and reduced yield in high-integration and high-processing-speed semiconductor devices.
Innovation Solution
A material comprising an imide compound and an organic solvent, formulated to cure under both air and inert gas conditions, with a specific molecular structure and molecular weight ratio, providing high heat resistance, adhesion, and planarizing properties, suitable for forming organic films in semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional organic film materials are used under inert gas conditions, then substrate corrosion occurs, but using air-based materials prevents corrosion only in air environments
Solution Approach 1:
The patent changes the chemical composition parameters of the organic film material by introducing imide compounds with specific molecular structures (formulae 1-4) that possess inherent stability under inert gas conditions. The molecular weight ratio control (Mw/Mn = 1.01-1.10) and specific functional groups create a material that maintains its protective function across different atmospheric conditions, resolving the contradiction between substrate protection reliability and atmosphere adaptability.
Solution Approach 2:
The patent creates a composite organic film material combining imide compounds with specific organic solvents and optional additives (crosslinking agents, plasticizers, surfactants). This composite formulation achieves both heat resistance and adhesion to substrates under inert gas conditions, while maintaining versatility across different manufacturing environments. The composite nature allows the material to exhibit multiple properties simultaneously that conventional single-component materials cannot achieve.
2Temperature
If high heat resistance is achieved in organic films, then film stability improves, but adhesion to substrate may deteriorate
Solution Approach 1:
The patent applies local quality by creating different functional regions within the organic film material. The imide compound structure provides heat resistance in the bulk material, while specific functional groups and surface properties ensure adhesion to the substrate. The molecular weight distribution (Mw/Mn control) creates local variations in chain length and packing that simultaneously provide thermal stability and bonding capability, resolving the contradiction between heat resistance and adhesion.
Solution Approach 2:
The patent changes multiple parameters of the organic film material including the molecular weight ratio (Mw/Mn = 1.01-1.10), the specific imide compound structure (formulae 1-4), and the ratio of imide compound to organic solvent. These parameter changes create a material that achieves both high heat resistance (maintaining film integrity at elevated temperatures) and strong adhesion to substrates, eliminating the trade-off between these two properties.
3Manufacturing precision
If planarizing properties are improved, then film thickness uniformity increases, but manufacturing complexity may increase
Solution Approach 1:
The patent achieves planarizing properties by controlling specific parameters of the imide compound including molecular weight distribution (Mw/Mn = 1.01-1.10), molecular structure (formulae 1-4 with specific R1 groups), and the ratio of imide compound to organic solvent (5-50 mass%). These parameter changes enable the material to self-planarize during film formation, improving film thickness uniformity without requiring complex post-processing steps or additional manufacturing equipment, thus resolving the contradiction between manufacturing precision and device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material forms organic films with excellent filling and planarizing properties, preventing substrate corrosion and ensuring high yield in semiconductor device manufacturing by maintaining film thickness stability and adhesion, even under high-temperature inert gas conditions.
Implementation Method 1
the compound is cured not only under air, but also under film formation conditions of inert gas
Implementation Method 2
a material for forming an organic film, comprising: (A) a compound for forming an organic film shown by the following general formula (1A)
Implementation Method 3
capable of filling a step- or pattern-dense region and a pattern-free region with a film to planarize the regions
Implementation Method 4
capable of filling a fine pattern including hole, trench, and fin formed on a substrate to be processed with a film without void
Implementation Method 5
a material for forming an organic film, comprising: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent
Data Source
AI summary
The present invention is a material for forming an organic film, containing: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, where W1 represents a tetravalent organic group, n1 represents an integer of 0 or 1, n2 represents an integer of 1 to 3, and R1 represents any one or more of the following general formulae (1B). This provides an imide compound, where the compound is cured not only under air, but also under film formation conditions of inert gas, and can form an organic underlayer film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film formation and adhesion to a substrate, and a material for forming an organic film containing the compound.