Imide Organic Underlayer Films for Heat-Resistant Planarization
Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving high integration and processing speed due to limitations in miniaturization, substrate corrosion under high temperature conditions, and insufficient film formation properties of organic underlayer films, leading to reduced yield and pattern formation issues.
Innovation Solution
A compound with an imide group that can be cured under inert gas or air conditions, providing excellent heat resistance, adhesion, and high filling and planarizing properties for forming an organic underlayer film, along with a substrate and method for forming an organic film using this compound.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional organic underlayer film materials are used and heated to high temperatures for film formation, then the substrate can be processed, but the substrate undergoes corrosion and film thickness fluctuation occurs
Solution Approach 1:
The patent employs an inert gas atmosphere (nitrogen or rare gas) during the heating process to prevent oxidation and corrosion of the substrate. This creates a protective environment that allows high-temperature film formation without substrate degradation, directly resolving the contradiction between achieving proper film formation temperature and preventing substrate corrosion
Solution Approach 2:
The patent uses a composite material system consisting of a specific organic compound (formula 1) combined with a silane coupling agent. This composite approach enhances both the film formation properties and the substrate adhesion/corrosion resistance, allowing the system to withstand high temperatures without compromising substrate integrity
2Ease of manufacture
If conventional organic underlayer film materials are used, then film formation can be achieved, but the film lacks sufficient heat resistance and causes thickness fluctuation during thermal decomposition
Solution Approach 1:
The patent modifies the chemical parameters of the organic underlayer film material by using a specific compound structure (formula 1) with controlled molecular weight and composition. This parameter optimization enables the film to maintain stable thickness during thermal decomposition while still achieving proper film formation, resolving the contradiction between ease of manufacture and compositional stability
3Reliability
If the organic film material is improved for heat resistance, then substrate corrosion is prevented, but the filling and planarizing properties may be compromised
Solution Approach 1:
The patent creates a composite material system where the organic compound (formula 1) is combined with a silane coupling agent. This composite structure simultaneously provides heat resistance, adhesion, and excellent filling/planarizing properties, allowing the film to maintain both thermal stability and surface quality without compromising either aspect
4Productivity
If existing organic film materials are used, then the manufacturing process can be completed, but the yield is reduced due to pattern formation issues
Solution Approach 1:
The patent optimizes the chemical parameters of the organic film material (using formula 1 compound with specific molecular weight and composition) to achieve stable film formation and excellent adhesion. This parameter optimization prevents pattern collapse and other yield-reducing defects, thereby improving manufacturing yield without sacrificing productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of an organic film with high heat resistance and excellent adhesion, preventing substrate corrosion and improving yield by maintaining film thickness stability during thermal decomposition, thus facilitating high-yield semiconductor device manufacturing.
Implementation Method 1
maintaining film thickness stability during thermal decomposition
Implementation Method 2
a compound with an imide group that can be cured under inert gas or air conditions
Implementation Method 3
excellent adhesion, preventing substrate corrosion
Data Source
Figure 1~2(F)
Figure 3(G)~3(I)
Figure 4(J)~4(K)
AI summary
An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (lA) or (1B); and (B) an organic solvent, noting that in the general formula (1A), when W1 represents any of , R1 does not represent any of