Immersion-Cooled Power Module for Low Thermal Resistance
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Solution Overview
Problem
Conventional semiconductor power modules suffer from high thermal resistances and inefficient heat dissipation due to the distance between heat-generating semiconductor devices and cooling liquids, particularly in high-power applications like HVDC systems, where thick metallic layers increase thermal resistance and limit heat extraction.
Innovation Solution
A semiconductor power module design featuring direct immersion cooling with a housing and metallic components that form an inner flow chamber around the semiconductor devices, allowing cooling fluid to be in direct contact for efficient heat transfer, either convectively or through phase change, minimizing thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If thick metallic layers are used in conventional semiconductor power modules, then structural strength and electrical conductivity are improved, but thermal resistance increases and heat extraction efficiency deteriorates
Solution Approach 1:
The module is divided into separate functional components: a substrate for mechanical support, a semiconductor chip mounted on it, and an integrated cooler with cooling channels. This segmentation allows each component to be optimized independently - the substrate provides structural strength while the cooler with thin metallic layers and direct fluid contact minimizes thermal resistance for efficient heat extraction.
Solution Approach 2:
The semiconductor chip is nested within a cavity of the substrate, and the cooler is integrated into the substrate structure with cooling channels formed directly within it. This nested configuration allows the cooling fluid to be in direct contact with the semiconductor chip, eliminating thick metallic layers between the heat source and coolant, thus reducing thermal resistance while maintaining structural integrity.
2Temperature
If conventional cooling systems with external coolers are used, then heat dissipation is achieved, but device complexity and space requirements increase
Solution Approach 1:
The cooler is merged with the substrate to form an integrated cooling system. The substrate serves dual functions: providing mechanical support for the semiconductor chip and acting as the cooler structure with integrated cooling channels. This eliminates the need for separate external cooler components, reducing device complexity and enabling compact design while maintaining effective heat dissipation.
Solution Approach 2:
The substrate is designed with multi-functionality: it provides structural support, houses the semiconductor chip in its cavity, contains integrated cooling channels for heat dissipation, and serves as part of the electrical connection path. This multi-functional design eliminates the need for separate dedicated cooler components, simplifying the overall device structure.
3Temperature
If cooling fluid is in direct contact with semiconductor devices, then heat transfer efficiency is improved, but electrical insulation requirements become more stringent
Solution Approach 1:
A dielectric cooling fluid is introduced as an intermediary between the semiconductor chip and the cooling system. This fluid provides both thermal conduction for efficient heat transfer and electrical insulation to prevent arcing and short circuits. The substrate cavity confines the fluid in direct contact with the semiconductor chip while the substrate itself and fluid pathways provide electrical isolation, thus achieving both high heat transfer efficiency and reliable electrical insulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves significant reduction in thermal resistance, enabling efficient heat removal and compactness, suitable for high-power applications without the need for external coolers, and supports high current densities and future semiconductor technologies like SiC.
Implementation Method 1
allowing cooling fluid to be in direct contact for efficient heat transfer, either convectively or through phase change
Implementation Method 2
allowing cooling fluid to be in direct contact for efficient heat transfer, either convectively or through phase change
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
A semiconductor power module (1) comprises a semiconductor power device (2), a first metallic component (11) coupled to a first side (5) of the semiconductor power device (2), and a second metallic component (12) coupled to a second side (6) of the semiconductor power device (2) opposite the first side (5). A control terminal (10) is electrically coupled to an electrical contact (7) of the semiconductor power device (2). The first and the second metallic component (11, 12) each comprises a respective given surface structure (13, 14) for guiding a cooling fluid along the semiconductor power device (2), and a hollow housing (4) limits a predetermined inner flow of the cooling fluid. The housing (4) comprises an inlet (43) and an outlet (44) for the entering and exiting of the cooling fluid into and out of the housing (4). The housing (4) is coupled to both the first and the second metallic component (11, 12) and encloses the semiconductor power device (2) such that the housing (4) and the first and the second metallic component (11, 12) form an inner flow chamber around the semiconductor power device (2) which is filled with the cooling fluid during operation of the semiconductor power module (1).