Immersion Resist Composition for Pattern Profile Stability
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Solution Overview
Problem
Current resist compositions for immersion exposure in semiconductor manufacturing face challenges with pattern profile and collapse issues, particularly when subjected to immersion exposure, leading to deterioration in resist performance compared to dry exposure methods.
Innovation Solution
A positive resist composition is developed, comprising a resin with an alicyclic hydrocarbon structure that increases solubility in alkaline developers upon acid action, combined with a compound capable of generating acid upon irradiation, and specific molecular weight and dispersion characteristics, along with a basic compound structure, to enhance pattern formation and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If immersion exposure is used to increase resolution, then the resolution and depth of focus are improved, but the resist composition deteriorates and pattern collapse occurs
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific compounds: a carboxylic acid group-containing compound (0.1-10 wt%), a sulfonic acid group-containing compound (0.1-10 wt%), and a cyclic carbonated ester compound (1-50 wt%). These parameter changes modify the resist's interaction with immersion liquid, preventing decomposition and pattern collapse while maintaining high resolution capability.
Solution Approach 2:
The patent creates a composite resist system by combining multiple functional components: the base resin, carboxylic acid compound, sulfonic acid compound, and cyclic carbonated ester compound. This composite approach allows the resist to simultaneously achieve immersion exposure compatibility, pattern stability, and high resolution by leveraging the synergistic effects of different chemical groups.
2Use of energy by moving object
If chemical amplification method is used to compensate for sensitivity reduction, then the sensitivity is improved, but the pattern profile deteriorates and collapse increases in immersion exposure
Solution Approach 1:
The patent modifies the chemical amplification process parameters by introducing specific acid generators and their corresponding bases. The carboxylic acid group-containing compound and sulfonic acid group-containing compound act as controlled acid sources that, when combined with the cyclic carbonated ester compound, provide gentle and uniform chemical amplification. This prevents excessive etching that would damage pattern profiles while maintaining sensitivity enhancement.
3Manufacturing precision
If resist layer is contacted with immersion liquid during exposure, then the immersion effect is achieved, but the resist decomposes and adverse ingredients ooze out
Solution Approach 1:
The patent introduces the cyclic carbonated ester compound as an intermediary substance that mediates between the resist composition and the immersion liquid. This compound acts as a protective barrier that prevents direct harmful interactions between the immersion liquid and sensitive resist components, thereby preventing decomposition and ingredient leaching while allowing the immersion exposure effect to occur.
Solution Approach 2:
The patent changes the chemical composition parameters by adding specific functional compounds that modify the resist's chemical stability. The carboxylic acid group-containing compound and sulfonic acid group-containing compound provide enhanced chemical stability, allowing the resist to withstand contact with immersion liquid without decomposition, thus enabling successful immersion exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition improves pattern profile and reduces collapse during immersion exposure, maintaining performance comparable to dry exposure methods while ensuring stability and resolution.
Implementation Method 1
an image-forming method of exposing a resist to decompose an acid generator in the exposed area to thereby generate an acid, utilizing the generated acid as the reactive catalyst to change an alkali-insoluble group to an alkali-soluble group by the bake after exposure (PEB: Post Exposure Bake), and removing the exposed area by alkali development
Implementation Method 2
exposing a resist to decompose an acid generator in the exposed area to thereby generate an acid
Data Source
AI summary
A positive resist composition for immersion exposure comprising: (A) a resin having an alicyclic hydrocarbon structure, wherein the resin is capable of increasing a solubility of the resin (A) in an alkaline developer by an action of an acid; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and radiation, wherein the resin (A) includes a component having a molecular weight of 1,000 or less in an area ration of 20% or less to an entire area in a pattern area by gel permeation chromatography, and a pattern-forming method using the same.