Impedance Matching Network with Adjustable Inductor

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Solution Overview

Problem

Existing impedance matching networks in plasma processing systems are inadequate for providing efficient power delivery over a wide frequency range, leading to inefficiencies in semiconductor fabrication processes.

Innovation Solution

Incorporating an adjustable inductor into the impedance matching network, coupled between the input of the plasma chamber and ground, allows for impedance matching across a broader frequency range by adjusting the impedance of the network to match that of the power source, enhancing power delivery efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If an L-shaped matching network with only two capacitors is used, then the structure is simple, but the impedance matching capability is limited to a narrow frequency range

Engineering Contradiction:
Improvematching network structureVSAvoidfrequency range coverage
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent transforms the static L-shaped matching network into a dynamic Pi-shaped matching network with adjustable components. The network now includes adjustable capacitors C1 and C2, and adjustable inductors L1 and L2, allowing the impedance matching parameters to be dynamically adjusted across different frequencies. This enables the matching network to adapt to a wide frequency range (400 kHz to 220 MHz) while maintaining proper impedance matching at each frequency point.

Inventive Principle:
Principle #15Dynamics

2Ease of manufacture

If the matching network is fixed for a specific frequency, then the design is straightforward, but it cannot operate efficiently over a wide frequency range

Engineering Contradiction:
Improvenetwork designVSAvoidpower delivery efficiency
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The patent employs adjustable capacitors and inductors that allow continuous or discrete adjustment of the matching network parameters (capacitance and inductance values). By changing these parameters, the network can be optimized for different frequency points within the 400 kHz to 220 MHz range, ensuring maximum power transfer efficiency at each operating frequency while maintaining a relatively simple overall structure.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables efficient power delivery across a wide frequency range, from 400 kHz to 220 MHz, improving the performance and versatility of plasma processing systems in semiconductor fabrication.

Implementation Method 1

an impedance matching network is needed for efficiently delivering power from the RF power source to an antenna of the plasma chamber

Methodology Applied
Scientific EffectElectromagnetic Induction: Electromagnetic Induction

Implementation Method 2

The impedance matching network is an L-shaped matching network consisting of only two capacitors

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS11348761B2Impedance matching apparatus and control method
Publication Date: 2022.05.31 TOKYO ELECTRON LTD
  • US11348761B2 patent drawing
  • US11348761B2 patent drawing
  • US11348761B2 patent drawing

AI summary

A system includes a plasma chamber coupled to a power source, and an impedance matching network coupled between the power source and the plasma chamber, wherein the impedance matching network comprises an L-shaped network and a first adjustable inductor coupled between an input of the plasma chamber and ground, and wherein the impedance matching network is configured such that, in a predetermined frequency range, an impedance of the impedance matching network and the plasma chamber is substantially equal to an impedance of the power source.