Metal Implant Surface Treatment Electrolyte for Porous Oxide Layer Formation

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Solution Overview

Problem

Conventional electrolytes and surface treatment methods for metal implants with apertures or tunnels are ineffective due to reaction gas adherence, which hinders the formation of a porous oxide layer during micro-arc discharge.

Innovation Solution

An electrolyte composition of 10-30 wt % sulfur-containing compound, 3-10 wt % phosphorous-containing compound, 0.5-2 wt % oxidant, and 0.5-5 wt % surfactant aqueous solutions, along with a micro-arc discharge process at 150-500 V and 0 to −10° C., prevents reaction gas adherence and facilitates the formation of a porous oxide layer with volcanic vent-like pores.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional electrolyte is used for surface treatment of metal implant with apertures or tunnels, then micro-arc discharge reaction can occur, but reaction gas adheres to the surface and prevents porous oxide layer formation

Engineering Contradiction:
Improveporous oxide layer formationVSAvoidreaction gas adherence
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A surfactant is introduced as an intermediary substance in the electrolyte to modify the surface properties and prevent reaction gas adherence. The surfactant acts as a mediator between the reaction gas and the metal implant surface, reducing surface tension and preventing gas bubble attachment, thereby enabling successful porous oxide layer formation on implants with apertures or tunnels.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrolyte composition is modified by adjusting the concentrations of sulfur-containing compounds, phosphorous-containing compounds, oxidants, and adding surfactants. These parameter changes alter the chemical and physical properties of the electrolyte, improving its ability to prevent reaction gas adherence while maintaining effective micro-arc discharge for porous oxide layer formation.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If metal implant has apertures or tunnels, then biocompatibility can be improved, but reaction gas easily adheres to surface during micro-arc discharge

Engineering Contradiction:
ImprovebiocompatibilityVSAvoidreaction gas adherence
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The surfactant serves as an intermediary that specifically addresses the harmful effect of reaction gas adherence on implants with apertures or tunnels. By modifying the surface energy and wetting properties, the surfactant enables the electrolyte to effectively reach and treat the interior surfaces of apertures and tunnels without being hindered by gas bubble formation.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of manufacture

If conventional electrolyte composition is used, then surface treatment can be performed, but processing time is extended and efficiency is reduced

Engineering Contradiction:
Improvesurface treatment capabilityVSAvoidprocessing efficiency
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

By optimizing the concentrations of sulfur-containing compounds (0.1-3 M), phosphorous-containing compounds (0.05-2 M), oxidants (0.05-1 M), and surfactants (0.05-5 M) in the electrolyte, the chemical reactivity and gas release characteristics are improved. These parameter changes accelerate the micro-arc discharge reaction and porous oxide layer formation process, reducing processing time while maintaining treatment quality.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method ensures the formation of a porous oxide layer on metal implants with improved biocompatibility and bonding strength to human hard tissues, while simplifying the surface treatment process and reducing processing time.

Implementation Method 1

forming said porous oxide layer on the surface of the metal implant through micro-arc discharge reaction

Methodology Applied
Scientific EffectMicro-arc discharge: Electric Arc

Implementation Method 2

forming said porous oxide layer on the surface of the metal implant through micro-arc discharge reaction

Methodology Applied
Scientific EffectElectrochemical oxidation: Oxidation

Implementation Method 3

0.5-5 wt % of a surfactant aqueous solution... reaction gas generated due to micro-arc discharge reaction is prohibited from adhering to a surface of a metal implant

Methodology Applied
Scientific EffectSurfactant action: Surfactant

Implementation Method 4

10-30 wt % of a sulfur-containing compound aqueous solution, 3-10 wt % of a phosphorous-containing compound aqueous solution

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS9765442B2Electrolyte for surface treatment of metal implant and method for surface treatment of metal implant using said electrolyte
Publication Date: 2017.09.19 METAL INDS RES & DEV CENT
  • US9765442B2 patent drawing
  • US9765442B2 patent drawing
  • US9765442B2 patent drawing

AI summary

An electrolyte for surface treatment of a metal implant includes 10-30 wt % of a sulfur-containing compound aqueous solution, 3-10 wt % of a phosphorous-containing compound aqueous solution, 0.5-2 wt % of an oxidant aqueous solution, and 0.5-5 wt % of a surfactant aqueous solution, with the rest being water. The concentration of the sulfur-containing compound aqueous solution is 0.1-3 M. The concentration of the phosphorous-containing compound aqueous solution is 0.05-2 M. The concentration of the oxidant aqueous solution is 0.05-1 M. The concentration of the surfactant aqueous solution is 0.05-5 M. The electrolyte is utilized for treating a surface of a metal implant, forming a porous oxide layer on the surface of the metal implant.