Ion Implantation Source Insulator Cavity to Prevent Leakage Paths
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Solution Overview
Problem
The ion implantation tool faces issues with electrical arcing and reduced ion dissociation performance due to the difference in electrical potential between the arc voltage and extraction voltage, which can lead to damage and instability in the ion beam, and existing insulators may form leakage paths, negating their isolation benefits.
Innovation Solution
An insulator with an internal cavity featuring a back and forth pattern is used to provide electrical isolation between high and low voltage components, increasing the mean free path of gas molecules and reducing the likelihood of a continuous film or coating formation, thereby preventing leakage paths and extending the tool's operational time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulator is provided between the extraction voltage conductor and arc voltage components, then electrical isolation is improved, but a leakage path may form along the insulator due to continuous film or coating formation
Solution Approach 1:
The patent introduces a tortuous path configuration within the insulator that transforms a straight-line potential leakage path into a multi-dimensional曲折 path. The tortuous path includes multiple bends and turns that increase the effective length and complexity of any potential leakage path, making it much more difficult for continuous films or coatings to form across the insulator. This dimensional transformation from a simple linear barrier to a complex multi-path structure effectively prevents leakage while maintaining electrical isolation.
2Ease of manufacture
If the insulator surface is exposed to gas molecules, then gas molecules can form a continuous film or coating along the insulator, but increasing surface area exposure increases leakage risk
Solution Approach 1:
The patent applies local quality by creating regions of different gas molecule exposure within the insulator structure. The tortuous path design ensures that certain critical regions have reduced direct exposure to gas molecules compared to others, disrupting the uniform formation of continuous films. By varying the local exposure characteristics along the insulator surface, the patent prevents the development of continuous conductive pathways while maintaining the overall insulator functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The insulator effectively reduces the risk of electrical arcing and leakage paths, enhancing the stability and longevity of the ion implantation tool by maintaining electrical isolation and improving ion beam performance.
Implementation Method 1
increasing the mean free path of gas molecules in the ion implantation source
Data Source
AI summary
An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.