Imprint Lithography Drop Density Adjustment for Etching Uniformity
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Solution Overview
Problem
In semiconductor manufacturing, imprint lithography faces challenges in achieving uniform etching pattern widths across different regions due to variations in residual film thickness and template dimension errors, leading to inconsistent etching patterns and increased costs.
Innovation Solution
A pattern formation method that corrects residual film thickness based on the relationship between residual film thickness and etching pattern dimensions, using a drop recipe adjustment system to optimize drop density distribution, ensuring uniform etching patterns by adjusting the drop density of the imprint material according to measured residual film thickness and etching pattern widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If imprint lithography is used with standard drop density, then manufacturing cost is reduced compared to photolithography, but etching pattern width uniformity deteriorates due to residual film thickness variations
Solution Approach 1:
The patent applies local quality by varying the drop density of imprint material according to the specific region of the substrate. Areas with larger residual film thickness receive higher drop density, while areas with smaller residual film thickness receive lower drop density. This localized adjustment ensures uniform cured film thickness across different regions, thereby achieving uniform etching pattern widths while maintaining the cost advantages of imprint lithography.
Solution Approach 2:
The patent changes the parameter of drop density from a constant value to a spatially varying value based on measured residual film thickness distributions. By adjusting this parameter according to regional characteristics, the method compensates for residual film variations and achieves uniform etching patterns without requiring expensive equipment modifications or complex process changes.
2Ease of operation
If uniform drop density is used across the substrate, then the imprint process is simple to operate, but etching pattern dimensions vary due to template dimension errors and residual film variations
Solution Approach 1:
The patent applies preliminary action by measuring the residual film thickness distribution before the imprint process and using this information to determine the optimal drop density distribution. This preliminary measurement and calculation step enables the subsequent imprint process to be tailored to the specific substrate conditions, compensating for variations before they affect the final pattern dimensions.
Solution Approach 2:
The patent implements feedback by using measured residual film thickness data to adjust the drop density distribution. The measurement results from previous steps feed into the drop density calculation, creating a closed-loop system that continuously optimizes the imprint process based on actual substrate conditions, thereby improving pattern consistency.
3Productivity
If residual film thickness variations are not corrected, then the manufacturing process remains fast and efficient, but etching pattern width uniformity deteriorates across different substrate regions
Solution Approach 1:
The patent performs preliminary measurement of residual film thickness and calculation of optimal drop density distribution before the actual imprint process. This preparation step enables the subsequent high-speed imprinting to produce uniform patterns without requiring time-consuming trial-and-error adjustments during production.
Solution Approach 2:
The patent changes the drop density parameter based on residual film measurements, enabling the process to maintain high productivity while achieving uniform etching patterns. The parameter adjustment is calculated in advance and applied automatically during the imprint process, avoiding slow manual adjustments.
Data Source
AI summary
According to one embodiment, a pattern formation method includes correcting, based on a relationship between a residual film thickness of an imprint pattern and a dimension of an etching pattern that is formed using an imprint pattern as a mask, the residual film thickness of the imprint pattern; and using the imprint pattern with the corrected residual film thickness as a mask to form an etching pattern with the corrected dimension.