Imprint Lithography Topography Correction via Localized Material Modification
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Solution Overview
Problem
Imprint lithography faces challenges in achieving uniform pattern features due to non-uniformities in the imprint lithography template, which cannot be addressed by adjusting the radiation dose as in optical lithography, since the template's topography dictates the feature dimensions.
Innovation Solution
The method involves adding etch-resistant material to or removing parts of the patterned layer of imprintable medium using localized heating or plasma to correct differences between intended and actual topographies, thereby reducing non-uniformities in the pattern features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If imprint lithography template is used to transfer pattern onto substrate, then resolution is not limited by radiation wavelength or numerical aperture, but non-uniformities in template topography cause non-uniform pattern features on substrate
Solution Approach 1:
The patent applies preliminary action by detecting template topography non-uniformities before the imprinting process and pre-compensating for them. The system measures the actual topography of the template, identifies deviations from intended dimensions, and adjusts the imprintable medium properties or imprinting parameters in advance to compensate for these non-uniformities, ensuring uniform pattern features on the substrate.
Solution Approach 2:
The patent implements feedback by continuously monitoring the template topography and using this information to adjust imprinting parameters. The system measures actual template features, compares them to intended dimensions, and feeds this information back to modify the imprinting process in real-time, such as adjusting local pressure, temperature, or imprintable medium viscosity to compensate for template non-uniformities.
2Measurement precision
If radiation dose is adjusted to correct non-uniformities in optical lithography, then pattern uniformity can be improved, but this approach is not applicable to imprint lithography where template topography directly dictates feature dimensions
Solution Approach 1:
The patent applies parameter changes by modifying physical or chemical parameters of the imprintable medium or imprinting process to compensate for template non-uniformities. This includes changing local viscosity, temperature, or pressure parameters of the imprintable medium, or adjusting imprinting pressure and duration, to achieve uniform pattern features despite template topography variations.
3Manufacturing precision
If etch resistant material is added or removed from patterned layer, then difference between intended and actual topography can be reduced, but process complexity increases
Solution Approach 1:
The patent applies local quality by selectively adding or removing etch resistant material from specific regions of the patterned layer based on local topography deviations. The system identifies areas where pattern features deviate from intended dimensions and applies material modification only to those specific locations, rather than uniformly across the entire substrate, thereby reducing overall process complexity while achieving the desired uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures that pattern features on the substrate are uniform and consistent, aligning with intended dimensions by locally modifying the patterned layer's topography, thus overcoming template manufacturing defects.
Implementation Method 1
removing a part of the patterned layer of imprintable medium, to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium, the removal being undertaken using a plasma applied locally to that part of the patterned layer of imprintable medium
Implementation Method 2
adding etch resistant material to a part of the patterned layer of imprintable medium, to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium
Data Source
AI summary
An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.