Imprint Masking for Semiconductor Overgrowth Layers
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Solution Overview
Problem
The semiconductor industry faces challenges in producing high-purity, defect-free layers for semiconductor components, particularly due to the complexity and expense of photolithographic methods used to create masks for lateral overgrowth processes.
Innovation Solution
The method employs imprint technology to create masks directly on seed layers, using suitable imprint materials that can be converted into hard layers through heat treatment, thereby simplifying the process and reducing the need for multiple photolithographic steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithographic methods are used to create masks, then masks can be produced with defined structures, but the process becomes complex and expensive with multiple steps
Solution Approach 1:
The patent extracts the essential function of mask creation from the complex photolithographic process. Instead of using full photolithography with photoresist, exposure, development and etching, the invention uses a simplified approach where a mask layer is directly applied and structured through imprinting or direct writing methods, removing unnecessary process steps while maintaining mask definition quality
Solution Approach 2:
The patent employs copying by using a master mask or template to replicate the desired mask pattern directly onto the mask layer. This copying approach eliminates the need for photoresist patterning and multiple processing steps, achieving the same structural definition through a single imprinting or direct writing operation
2Manufacturing precision
If photolithographic methods are used to create masks, then masks can be produced, but production time increases due to multiple process steps
Solution Approach 1:
The patent applies preliminary action by pre-structuring the mask pattern on a master template or master mask before transferring it to the actual mask layer. This preliminary preparation allows the actual mask creation to be done through a single rapid imprinting or direct writing step, rather than through multiple sequential photolithographic steps, thereby reducing production time while maintaining precision
Solution Approach 2:
The patent merges multiple separate photolithographic steps (photoresist application, exposure, development, etching) into a single integrated process step. By combining these operations into one imprinting or direct writing operation, the total production time is reduced while the mask structure definition remains precise
3Ease of manufacture
If simple polymer-based photoresists are used, then the masking process is simpler, but hard material layers cannot be achieved
Solution Approach 1:
The patent applies parameter changes by transforming the physical and chemical properties of the mask material through controlled processes. The mask layer is applied in a soft, easily structured state (similar to photoresist simplicity) and then converted into a hard, durable material through heat treatment, chemical vapor deposition, or other transformation processes. This parameter change allows the material to exhibit both ease of manufacture during patterning and strength during subsequent processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more efficient production of semiconductor components with significant time savings and the ability to produce high-quality, defect-free monocrystalline and epitaxial layers with reduced dislocation density.
Implementation Method 1
a mask for masking the overgrowth layer is imprinted onto the seed layer
Implementation Method 2
converted, particularly into a hard material layer, in a further process step
Implementation Method 3
an overgrowth layer of a coating material, which grows on a seed layer surface and this proceeds in a monocrystalline and/or epitaxial manner
Data Source
AI summary
A method for applying a masked overgrowth layer onto a seed layer for producing semiconductor components, characterized in that a mask for masking the overgrowth layer is imprinted onto the seed layer.