Imprint Template Dummy Patterns for Bubble-Free Pattern Transfer
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Solution Overview
Problem
In semiconductor device manufacturing, imprint lithography faces challenges with resist pattern formation defects due to air bubbles and inefficiencies in pattern transfer, particularly in regions with varying pattern density, leading to prolonged processing times and potential damage to templates.
Innovation Solution
A pattern forming method using a template with actual and dummy patterns, where the dummy patterns reduce pattern density differences and prevent air bubbles by filling gaps between actual patterns, allowing for efficient resist material distribution and curing, thereby enhancing the imprint process and extending template lifespan.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If imprint lithography is performed on regions with varying pattern density, then pattern transfer is achieved, but air bubbles form in sparse regions causing resist pattern formation defects
Solution Approach 1:
The patent applies local quality by introducing dummy patterns specifically in sparse regions where air bubbles form. These dummy patterns are placed only in regions where they are needed to maintain uniform pattern density, rather than uniformly across the entire template. This local modification ensures that resist material distributes evenly during the imprint process, preventing air bubble formation in sparse regions while maintaining high manufacturing precision for the actual patterns.
2Reliability
If dummy patterns are added to fill gaps between actual patterns, then air bubble trapping is reduced, but template complexity increases
Solution Approach 1:
The dummy patterns are strategically placed only in sparse regions between actual patterns where air bubbles are likely to form, rather than uniformly across the entire template. This localized approach increases template complexity only where necessary to improve reliability, minimizing the overall impact on template design while effectively preventing air bubble trapping in critical areas.
3Reliability
If uniform pattern density is maintained across the template, then air bubbles are prevented, but processing time increases due to additional dummy patterns
Solution Approach 1:
The dummy patterns are introduced only in sparse regions where pattern density varies, rather than uniformly across the entire template. This selective placement maintains pattern transfer consistency in critical areas while minimizing the number of dummy patterns needed, thereby reducing the overall processing time and maintaining higher productivity compared to a uniform approach.
4Reliability
If resist material is distributed evenly across the template, then air bubbles are minimized, but resist material usage increases
Solution Approach 1:
The dummy patterns are placed only in sparse regions where resist material would otherwise be insufficient to prevent air bubble formation. This localized addition of pattern elements ensures that resist material distributes evenly only where needed, maintaining high resist pattern quality while minimizing overall resist material consumption compared to a uniform distribution approach across the entire template.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents resist pattern formation defects, reduces processing time, and extends template lifespan by minimizing air bubble trapping and optimizing resist material usage, while maintaining the integrity of actual patterns during the semiconductor device manufacturing process.
Implementation Method 1
the resin material is cured by light irradiation
Data Source
AI summary
According to one embodiment, a pattern forming method includes placing a resin material on a film to be processed; pressing a template including a plurality of patterns protruding from a reference plane against the resin material to form a first resin film having first and second patterns, separated from each other in a first direction, and a third pattern between the first and second patterns; forming a second resin film that covers the first resin film; selectively exposing and developing the second resin film to expose the first and second patterns; and processing the film to be processed via the first and second resin films to transfer the first and second patterns to the film to be processed.