Imprint Lithography Template for 3D NAND Pattern Formation
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Solution Overview
Problem
Current methods for forming integrated structures of thick and fine patterns in three-dimensional memory cell arrays are costly and inefficient, particularly in the manufacturing of semiconductor devices like three-dimensional NAND flash memory, where precise pattern formation is required for both thick film and fine pattern regions.
Innovation Solution
A pattern forming method using imprint lithography, where a resist pattern is formed in multiple steps with different resist patterns serving as etching masks, and an imprint apparatus transfers template patterns onto a substrate using ultraviolet and vacuum ultraviolet light to cure the resist, ensuring precise formation of stair-shaped and fine patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple separate patterning processes are used to form thick and fine patterns, then pattern precision is improved, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent combines multiple patterning functions into a single imprint lithography process. A single template contains both thick pattern regions (for thick film formation) and fine pattern regions (for fine pattern formation), allowing both pattern types to be formed simultaneously in one step rather than requiring separate patterning processes.
Solution Approach 2:
The template is designed with multi-functionality to serve multiple patterning purposes. Different regions of the template are configured to form different pattern types (thick and fine patterns) with a single template structure, eliminating the need for multiple specialized templates and processes.
2Manufacturing precision
If multiple separate patterning processes are used to form thick and fine patterns, then pattern precision is improved, but manufacturing time increases
Solution Approach 1:
The patent merges multiple patterning operations into one imprint lithography step. By forming both thick and fine patterns simultaneously using a single template, the total manufacturing time is reduced compared to sequential processes while maintaining high pattern precision.
Solution Approach 2:
The template is pre-configured with all necessary pattern information (both thick and fine pattern regions) before the patterning process. This preliminary preparation allows the imprint lithography to directly form both pattern types in one step without requiring intermediate processing steps.
3Ease of manufacture
If conventional lithography is used for thick film patterning, then process simplicity is maintained, but pattern precision for fine features deteriorates
Solution Approach 1:
The template is designed with local quality variations - different regions have different structural characteristics optimized for specific pattern types. The thick pattern region and fine pattern region have distinct structural features that enable each to form its intended pattern type with high precision while maintaining overall process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the cost-effective and precise formation of complex patterns in semiconductor devices, improving adhesiveness and preventing defects such as air gaps and etching defects, thereby enhancing the manufacturing efficiency of three-dimensional memory cell arrays.
Implementation Method 1
an imprint apparatus transfers template patterns onto a substrate using ultraviolet and vacuum ultraviolet light to cure the resist
Data Source
AI summary
A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the second resist pattern on the substrate.