Impurity Analysis Device Silicon Contamination Removal
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Solution Overview
Problem
Current impurity analysis methods face challenges in accurately analyzing metallic impurities in semiconductor thin films due to silicon atom contamination in chemical solutions, especially when using TXRF spectrometry, and the need for costly and time-consuming pretreatment processes for ICP-MS analysis.
Innovation Solution
An impurity analysis device and method involving vapor-phase decomposition, followed by heating at specific temperatures to remove silicon compounds, using a recovery solution to collect metallic impurities, and subsequent X-ray fluorescence spectrometry for accurate analysis, which improves the recovery rate and reduces contamination effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If vapor phase decomposition is performed to recover metallic impurities from oxide films, then impurity recovery is achieved, but silicon atoms remain in the chemical solution causing contamination
Solution Approach 1:
The patent extracts and removes silicon compounds from the chemical solution through heating treatment at 100-200°C before analysis. This separation step eliminates the harmful silicon contamination that would otherwise interfere with metallic impurity detection, allowing accurate measurement of trace metal elements without interference from excess silicon atoms.
Solution Approach 2:
The patent performs preliminary heating treatment to remove silicon compounds before the actual metallic impurity analysis. This preliminary action prevents silicon contamination from affecting the subsequent measurement process, ensuring that the chemical solution is ready for accurate metallic impurity detection without requiring complex pretreatment steps.
2Measurement precision
If ICP-MS spectrometry is used for metallic impurity analysis, then analysis capability is improved, but costly and time-consuming pretreatment is required
Solution Approach 1:
The patent replaces complex mechanical/chemical pretreatment processes with a simple heating treatment. Instead of using multiple reagents, filtration steps, or complex separation procedures, the method uses thermal energy to remove silicon compounds, significantly reducing pretreatment time and complexity while maintaining ICP-MS analysis capability for metallic impurities.
Solution Approach 2:
The patent changes the temperature parameter of the chemical solution from room temperature to 100-200°C through heating treatment. This parameter change causes silicon compounds to precipitate or decompose, removing them from the solution. The simple temperature adjustment replaces complex pretreatment procedures while preserving the ability to perform sensitive metallic impurity analysis by ICP-MS.
3Productivity
If TXRF spectrometry is used without removing silicon atoms, then rapid analysis is achieved, but silicon contamination prevents low concentration analysis
Solution Approach 1:
The patent extracts silicon compounds from the chemical solution through heating at 100-200°C before TXRF analysis. This removal step eliminates the silicon background signal that would otherwise mask low-concentration metallic impurities, enabling the TXRF spectrometer to detect trace metal elements with high sensitivity while maintaining rapid analysis throughput without complex pretreatment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and cost-effective analysis of metallic impurities by removing silicon residues, preventing contamination and allowing for rapid, accurate TXRF measurements, even in low-concentration scenarios.
Implementation Method 1
heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film
Implementation Method 2
performing vapor-phase decomposition on a silicon-containing film formed on a substrate
Implementation Method 3
performing X-ray fluorescence spectrometry on a dried mark
Data Source
AI summary
According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.