Insulated Metal Substrate With Oxynitride Layer for Heat and Isolation
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Solution Overview
Problem
Current ceramic core substrate devices face challenges with thermal stress fractures due to mismatched thermal expansion coefficients between ceramic and metal layers, and alumina and aluminum nitride deposited-dielectric layers have limitations in thermal conductivity and electrical insulation, leading to performance issues in thermal management and longevity.
Innovation Solution
The development of an insulated metal substrate with a metal-oxynitride film that includes a metal-based or metalloid-based oxynitride layer with specific oxygen and nitrogen compositions, providing enhanced adhesion and improved thermal conductivity and electrical insulation, and a stress reduction metal layer to mitigate thermal expansion mismatch.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If ceramic core substrate is used with attached metal layer, then thermal conductivity is improved, but thermal stress fractures occur due to mismatched thermal expansion coefficients
Solution Approach 1:
The patent introduces a deposited-dielectric layer as an intermediary between the metal layer and ceramic core substrate. This intermediate layer acts as a stress buffer that accommodates the thermal expansion mismatch between the metal and ceramic materials, preventing direct stress transmission that causes fractures while maintaining the thermal management functionality.
Solution Approach 2:
The patent creates a composite structure consisting of metal layer, deposited-dielectric layer, and ceramic core substrate. This composite design combines materials with different thermal expansion coefficients in a layered configuration, allowing each layer to contribute its beneficial properties while the overall structure resists thermal stress through the graded composition.
2Reliability
If alumina deposited-dielectric layer is used, then electrical insulation is improved, but thermal conductivity deteriorates
Solution Approach 1:
The patent modifies the parameters of the deposited-dielectric layer by controlling deposition conditions (temperature, pressure, gas flow ratios) to achieve optimal oxygen and nitrogen content. This parameter optimization allows the dielectric layer to simultaneously achieve sufficient electrical insulation while maximizing thermal conductivity within the constraints of dielectric material properties.
Solution Approach 2:
The patent applies different quality characteristics to different regions of the deposited-dielectric layer. The layer exhibits graded composition with varying oxygen and nitrogen content through its thickness, providing high electrical insulation near the metal interface while maintaining better thermal conductivity toward the ceramic substrate interface.
3Temperature
If AlN deposited-dielectric layer is used, then thermal conductivity is improved, but electrical insulation deteriorates
Solution Approach 1:
The patent controls the deposition parameters to achieve a specific nitrogen content range (5-50 atomic percent) in the deposited-dielectric layer. By precisely adjusting the nitrogen incorporation during deposition, the layer achieves enhanced thermal conductivity from AlN while maintaining adequate electrical insulation through controlled stoichiometry and phase composition.
Solution Approach 2:
The deposited-dielectric layer functions as a composite material containing both AlN phases (providing thermal conductivity) and alumina phases (providing electrical insulation). This composite dielectric layer combines the beneficial properties of both materials, achieving a balance between thermal management and electrical isolation requirements.
4Ease of manufacture
If direct plating or direct bonding is used to attach metal layer to ceramic substrate, then manufacturing simplicity is improved, but thermal stress fracture resistance deteriorates
Solution Approach 1:
The patent performs preliminary deposition of the dielectric layer on the ceramic substrate before attaching the metal layer. This preliminary action creates a stress-buffering interface that prevents thermal stress fractures during subsequent metal attachment processes, allowing the use of simple direct plating or bonding methods without compromising reliability.
Solution Approach 2:
The deposited-dielectric layer serves as an intermediary that enables simple direct attachment methods while protecting against thermal stress. This intermediate layer facilitates the manufacturing process by providing a suitable surface for metal deposition or bonding while simultaneously acting as a stress buffer during the attachment and subsequent thermal cycling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high thermal conductivity and electrical insulation, enhances adhesion of subsequent metal layers, and improves the longevity and performance of the substrate by reducing thermal stress fractures, enabling efficient heat removal and adequate electrical isolation.
Implementation Method 1
Device for thermal conduction and electrical isolation
Implementation Method 2
Device for thermal conduction and electrical isolation
Implementation Method 3
enhances adhesion of subsequent metal layers
Data Source
AI summary
The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at % to 49.9 at %, nitrogen is from 0.1 at % to 49.9 at % and a sum of oxygen and nitrogen is about 50 at %. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AlON), aluminum oxyhydronitride (AlHON), aluminum oxycarbonitride (AlCON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AlSi, C—Al, W—Cu, or Ti.