In-cell Touch Display Panel Structure with Integrated TFT Sensing
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Solution Overview
Problem
Conventional in-cell touch display panels require transparent sensing electrode layers made of ITO on glass substrates, increasing manufacturing costs and complexity, and leading to reduced light penetration and increased power consumption.
Innovation Solution
The in-cell touch display panel structure eliminates the need for a sensing electrode layer on the upper or lower glass substrate by integrating thin film transistors and sensing electrodes within the display panel, using conductive metal materials like chromium, barium, or silver, arranged in a specific pattern to form a single-layered touch pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a sensing electrode layer made of ITO material is configured on an upper or lower glass substrate, then touch sensing function is achieved, but manufacturing cost increases and manufacturing process becomes complicated
Solution Approach 1:
The patent merges the touch sensing electrode function with the existing thin film transistor structure by forming sensing conductor segments within the TFT layer. This integration eliminates the need for a separate ITO sensing electrode layer, reducing manufacturing steps and complexity while maintaining touch sensing capability through the combined TFT and sensing electrode structure.
Solution Approach 2:
The thin film transistor structure is designed to serve multiple functions: it acts as both the display driving transistor and the touch sensing electrode. The sensing conductor segments are formed within the TFT structure, allowing the same layer to perform both transistor functionality and touch sensing, thereby reducing the number of separate components needed.
2Reliability
If a sensing electrode layer made of ITO material is configured on an upper or lower glass substrate, then touch sensing function is achieved, but manufacturing cost increases
Solution Approach 1:
The patent merges the touch sensing electrode function with the existing thin film transistor structure by forming sensing conductor segments within the TFT layer. This integration eliminates the need for a separate ITO sensing electrode layer, reducing manufacturing steps and complexity while maintaining touch sensing capability through the combined TFT and sensing electrode structure.
Solution Approach 2:
The patent replaces expensive ITO material with alternative conductive materials such as metal particles or conductive polymers that can be deposited using standard semiconductor manufacturing techniques. These substitute materials are less expensive and can be applied in the same fabrication process steps, reducing overall manufacturing cost.
3Reliability
If a sensing electrode layer made of ITO material is configured on an upper or lower glass substrate, then touch sensing function is achieved, but light penetration rate is reduced
Solution Approach 1:
The patent extracts and removes the separate ITO sensing electrode layer from the display structure. By eliminating this additional transparent layer, the light path is simplified and light penetration is improved. The touch sensing function is maintained through the integrated TFT-based sensing conductor segments that do not interfere with light transmission.
4Reliability
If a sensing electrode layer made of ITO material is configured on an upper or lower glass substrate, then touch sensing function is achieved, but power consumption increases
Solution Approach 1:
The patent merges the touch sensing electrode function with the existing thin film transistor structure by forming sensing conductor segments within the TFT layer. This integration eliminates the need for a separate ITO sensing electrode layer, reducing manufacturing steps and complexity while maintaining touch sensing capability through the combined TFT and sensing electrode structure.
Data Source
AI summary
An in-cell touch display panel structure includes upper and lower substrates, a black matrix layer, a thin film transistor and sensing electrode layer including a gate line sub-layer and a source line sub-layer. The gate line sub-layer includes plural gate lines and plural first sensing conductor segments. The source line sub-layer includes plural source lines and plural second sensing conductor segments. The first and second sensing conductor segments are disposed corresponding to positions of opaque lines of the black matrix layer. The second sensing conductor segments are divided into a first group including plural second sensing conductor segments and a second group including plural second sensing conductor segments. The second sensing conductor segments of the first group and the first sensing conductor segments are formed with N quadrilateral regions, where N is a positive integer and any two quadrilateral regions are not connected with each other.


