In-Memory Matrix Formation via Sub-Threshold Voltage Sensing

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Solution Overview

Problem

Existing computing systems that utilize a von Neumann architecture face inefficiencies in power consumption and system resource utilization due to the need to transfer data between memory cells and processing units, which can outweigh the energy consumed by processing operations and increase processing time.

Innovation Solution

The integration of circuitry for matrix formation directly on the same chip as the memory cells, allowing computational operations to be performed without transferring data to external processing circuitry, thereby reducing power consumption and system resource utilization.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If data is transferred between memory cells and external processing units, then computational operations can be performed, but power consumption increases and processing time increases

Engineering Contradiction:
Improvepower consumptionVSAvoidprocessing efficiency
Core Design Contradiction:
Loss of energyVSProductivity

Solution Approach 1:

The patent combines memory cells and processing circuitry into a single integrated structure where memory cells are directly coupled to sense circuitry and voltage circuitry on the same chip. This merging eliminates the need for data transfer between separate memory and processing units, thereby reducing power consumption while maintaining processing efficiency through in-memory computation capabilities

Inventive Principle:
Principle #5Merging (Combining)

2Loss of time

If data is transferred between memory cells and external processing units, then computational operations can be performed, but processing time increases

Engineering Contradiction:
Improveprocessing timeVSAvoidcomputational throughput
Core Design Contradiction:
Loss of timeVSProductivity

Solution Approach 1:

By integrating sense circuitry and voltage circuitry directly with memory cells on the same chip, the patent enables computational operations to be performed without external data transfer. This merging of memory and processing functions reduces processing time while maintaining computational throughput through parallel in-memory operations

Inventive Principle:
Principle #5Merging (Combining)

3Loss of energy

If circuitry is integrated on the same chip as memory cells, then power consumption decreases, but device complexity increases

Engineering Contradiction:
Improvepower consumptionVSAvoidchip architecture complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent segments the integrated circuit into distinct functional blocks: memory cells, sense circuitry, and voltage circuitry. Each segment performs a specific function and is independently controllable, which manages device complexity through modular design while still achieving the power consumption benefits of integration

Inventive Principle:
Principle #1Segmentation

4Adaptability or versatility

If circuitry is integrated on the same chip as memory cells, then system resource utilization improves, but manufacturing complexity increases

Engineering Contradiction:
Improvesystem resource utilizationVSAvoidmanufacturing complexity
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The integrated circuit design provides multi-functionality by enabling both traditional memory operations and computational operations within the same structure. The sense circuitry can perform both reading functions and computational functions, improving system resource utilization while using standardized manufacturing processes for the integrated circuit

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250029642A1Matrix formation for performing computational operations in memory
Publication Date: 2025.01.23 MICRON TECHNOLOGY INC
  • US20250029642A1 patent drawing
  • US20250029642A1 patent drawing
  • US20250029642A1 patent drawing

AI summary

Apparatuses, methods, and systems for matrix formation for performing computational operations in memory are included. An embodiment includes a memory having a plurality of levels, wherein each of the plurality of levels includes a plurality of memory cells, voltage circuitry configured to apply sub-threshold voltages to the memory cells of each respective level, a plurality of sense lines, sense circuitry coupled to the plurality of sense lines, wherein the sense circuitry coupled to each respective sense line is configured to sense a state for each of the number of memory cells coupled to that respective sense line responsive to the voltage circuitry applying the sub-threshold voltages to the memory cells of each respective level, and processing circuitry configured to utilize the states for each of the memory cells to form a matrix and perform computational operations on data stored in the memory using the matrix.