In-Resist Contact Patterning Without Sidewall Spacer Processing
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Solution Overview
Problem
Conventional multi-patterning processes for high-density contact arrays in semiconductor manufacturing are costly and time-consuming due to the need for sidewall spacer processing, which involves vapor phase deposition and etching.
Innovation Solution
A method involving the use of solubility-shifting agents and polymeric fills to create relief patterns on a substrate, followed by diffusion and development to form solubility-shifted regions, allowing for the direct etching of target layers without the need for sidewall spacers, reducing the complexity and cost of the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional multi-patterning process with sidewall spacers is used, then high-density contact arrays can be formed, but the process becomes expensive and time-consuming due to vapor phase deposition and etching requirements
Solution Approach 1:
The patent extracts and eliminates the sidewall spacer formation step from the conventional multi-patterning process. Instead of forming spacers through vapor phase deposition and etching, the invention uses a solubility-modified resist process where the resist pattern itself directly defines the contact locations, removing the intermediate spacer structure and its associated complex processing steps
Solution Approach 2:
The patent employs a disposable solubility-modified resist layer that performs the patterning function and is then removed. This resist-based approach replaces expensive, complex vapor phase deposition and etching processes with simpler, more cost-effective wet chemical processing, achieving the same patterning result through a temporary, single-use resist structure
2Manufacturing precision
If conventional multi-patterning process with sidewall spacers is used, then high-density contact arrays can be formed, but the manufacturing time increases due to multiple vapor phase deposition and etching steps
Solution Approach 1:
The patent removes the time-consuming vapor phase deposition and etching steps from the process flow. By extracting these complex sequential operations and replacing them with a single solubility-modified resist development step, the manufacturing cycle time is significantly reduced while maintaining contact array density
Solution Approach 2:
The patent applies solubility modification to the resist pattern in advance before the final development step. This preliminary chemical modification allows the resist to self-differentiate into the final contact pattern during development, eliminating the need for subsequent complex etching steps and accelerating the overall manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of high-density contact arrays at lower costs and guaranteed sizes, eliminating the need for expensive sidewall spacer processing and simplifying the manufacturing process.
Implementation Method 1
diffusing the first solubility-shifting agent a predetermined distance into the first polymeric fill to provide a solubility-shifted region of the first polymeric fill
Data Source
AI summary
A method of microfabrication includes forming a first relief pattern on a target layer of a substrate, coating the first relief pattern with a first solubility-shifting agent, layering a first polymeric fill on the first relief pattern, and diffusing the first solubility-shifting agent into the first polymeric fill to provide a solubility-shifted region of the first polymeric fill. Then the method includes forming a second relief pattern over the first relief pattern, coating the second relief pattern with a second solubility-shifting agent, layering a second polymeric fill on the second relief pattern, and diffusing the second solubility-shifting into the second polymeric fill to provide a solubility-shifted region of the second polymeric fill. Finally, the solubility-shifted regions of the first polymeric fill and the second polymeric fill are developed and the target layer is etched.