InAlGaN Barrier Insulation Structure to Suppress Current Collapse
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Solution Overview
Problem
The surface damage of the InAlGaN barrier layer during the formation of a silicon nitride insulating layer leads to current collapse, hindering the improvement of output in semiconductor devices.
Innovation Solution
A semiconductor device is designed with a silicon nitride layer as the first insulating layer formed in situ following the nitride semiconductor laminated structure, followed by a second insulating layer, reducing surface damage and defects in the barrier layer, thereby improving output and reducing current collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon nitride insulating layer is formed on the InAlGaN barrier layer, then the insulating performance is improved, but surface damage and defects occur on the barrier layer
Solution Approach 1:
A first insulating layer is formed on the InAlGaN barrier layer before forming the main silicon nitride insulating layer. This preliminary layer protects the barrier layer surface from damage during subsequent processing steps, preventing surface defects while still allowing the main insulating layer to provide the required electrical insulation performance.
Solution Approach 2:
The first insulating layer acts as an intermediary between the InAlGaN barrier layer and the silicon nitride insulating layer. This intermediate layer reduces the direct harmful interaction between the barrier layer and the insulating layer formation process, thereby preventing surface damage while maintaining insulating performance.
2Productivity
If the barrier layer is damaged during insulating layer formation, then current collapse occurs, but this limits the improvement of output performance
Solution Approach 1:
The first insulating layer is formed in advance to protect the barrier layer before the main insulating layer formation process. This preliminary protection prevents surface damage that would otherwise cause current collapse, thereby maintaining current stability while enabling output performance improvement through proper insulating performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design minimizes surface damage to the barrier layer, enhancing the output and suppressing on-resistance, resulting in improved performance.
Implementation Method 1
a silicon nitride layer that includes one or more types of group III elements included in the barrier layer
Data Source
AI summary
A semiconductor device includes: a channel layer; a barrier layer that is provided above the channel layer and includes indium aluminum gallium nitride (InAlGaN); a first insulating layer provided on the barrier layer; and a second insulating layer provided on the first insulating layer, wherein the first insulating layer is a silicon nitride layer that includes one or more types of group III elements included in the barrier layer.