InAlO3(ZnO)m Sputtering Target for High Mobility Oxide Films
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Solution Overview
Problem
Current sputtering targets for oxide semiconductor thin films face issues such as high resistance, instability in film formation, and difficulty in achieving high field effect mobility and reliability, particularly in high-resolution displays and large-area applications.
Innovation Solution
A sputtering target composed of an indium, tin, zinc, and aluminum oxide with a homologous structure, specifically InAlO3(ZnO)m, is developed, which has a relative density of 98% or more and a bulk specific resistance of 5 mΩcm or less, along with a spinel structure compound Zn2SnO4, to enhance film formation stability and mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a sputtering target composed of In2Ga2ZnO7 or InGaZnO4 is used to increase sintering density, then the relative density improves, but the target resistance increases and abnormal discharge occurs during long-term use
Solution Approach 1:
The patent changes the compositional parameters by introducing aluminum oxide and controlling the atomic ratios of In, Ga, Zn, and Al within specific ranges. This parameter optimization prevents abnormal discharge while maintaining high sintering density, resolving the contradiction between density improvement and discharge prevention
Solution Approach 2:
The patent creates a composite oxide target material combining In2O3, Ga2O3, ZnO, and Al2O3 in specific proportions. This composite structure achieves both high density and stability during sputtering, eliminating the abnormal discharge issue that occurs with simpler compositions
2Reliability
If a sputtering target with high sintering density is used, then film formation stability improves, but the target resistance increases requiring high-temperature reduction treatment
Solution Approach 1:
The patent optimizes the atomic ratio parameters of the oxide components, specifically controlling Al content and In:Ga:Zn:Al ratios within defined ranges. This parameter tuning achieves the dual benefit of maintaining low target resistance while ensuring film formation stability, eliminating the need for high-temperature reduction treatment
3Temperature
If amorphous silicon is used as the semiconductor layer, then low-temperature film formation is achieved, but the switching speed becomes too slow for high-resolution displays
Solution Approach 1:
The patent changes the material composition parameters by incorporating aluminum oxide into the oxide semiconductor system and optimizing the atomic ratios. This compositional modification enables the oxide semiconductor to achieve high field effect mobility comparable to crystalline silicon while maintaining the low-temperature processing advantage of amorphous materials
4Speed
If crystalline silicon-based thin film is used to achieve high mobility, then switching speed improves, but production complexity and energy consumption increase significantly
Solution Approach 1:
The patent modifies the material parameters by using oxide semiconductors with optimized In:Ga:Zn:Al atomic ratios instead of crystalline silicon. This material substitution achieves high mobility and switching speed while enabling simple single-step sputtering deposition at low temperatures, dramatically reducing production complexity and energy consumption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The target enables the production of high-density, low-resistant sputtering targets that form oxide semiconductor thin films with high field effect mobility and reliability, suitable for high-resolution displays and large-area applications, while preventing abnormal discharge and improving film uniformity.
Implementation Method 1
a sputtering target comprising an oxide that comprises an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and comprises a homologous structure compound represented by InAlO3(ZnO)m
Data Source
AI summary
A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.