Inclined Gate Line Layout for FinFET Insulation Stability
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Solution Overview
Problem
The challenge in integrated circuit devices is to ensure a high operating speed and accuracy while maintaining a stable insulation distance between wirings and contacts within a reduced area, which is exacerbated by down-scaling.
Innovation Solution
The integrated circuit device incorporates fin-type active regions with inclined gate lines and fin isolation structures to maintain a sufficient insulation distance, reducing unwanted parasitic capacitance and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If down-scaling is applied to reduce device area, then area is reduced, but insulation distance between wirings and contacts becomes unstable
Solution Approach 1:
The gate line is designed with an asymmetric inclined structure where one end is higher than the other end. This asymmetry creates an inclined profile that increases the insulation distance between the gate line and adjacent structures (such as fin isolation regions or source/drain regions) without increasing the overall device area. The higher end of the inclined gate line provides greater vertical separation, thereby maintaining stable insulation distance while preserving compact area.
Solution Approach 2:
The invention transitions from a conventional horizontal insulation approach to a vertical/dimensional insulation approach by inclining the gate line. Instead of relying solely on horizontal spacing, the inclined structure utilizes the vertical dimension to increase insulation distance. The gate line is configured to have different heights at its ends, creating a three-dimensional profile that enhances insulation performance within the same planar footprint.
2Area of stationary object
If down-scaling is applied to reduce device area, then area is reduced, but parasitic capacitance increases
Solution Approach 1:
The asymmetric inclined gate line structure increases the physical distance between the gate line and adjacent conductive structures (such as source/drain regions or fin isolation regions). By having one end of the gate line positioned higher than the other, the minimum insulation distance is maximized, thereby reducing the electric field coupling and parasitic capacitance between adjacent structures.
Solution Approach 2:
The inclined gate line utilizes the vertical dimension to increase separation distance between conductive elements. This three-dimensional configuration reduces the overlap area and electric field interaction between the gate line and adjacent structures, effectively reducing parasitic capacitance without requiring additional planar area.
3Reliability
If insulation distance is increased to improve reliability, then reliability is improved, but device area increases
Solution Approach 1:
The invention resolves this contradiction by utilizing the vertical dimension through the inclined gate line structure. Instead of increasing horizontal spacing to improve insulation distance, the gate line is configured with an incline that creates greater vertical separation from adjacent structures. This allows the insulation distance to be increased without expanding the device footprint, as the additional separation is achieved in the vertical direction rather than the horizontal plane.
Solution Approach 2:
The asymmetric inclined profile of the gate line allows for optimized insulation distance at critical locations. By positioning one end of the gate line higher than the other, the structure provides enhanced insulation where needed (near fin isolation regions or source/drain regions) while maintaining compact dimensions elsewhere, thereby improving reliability without proportionally increasing device area.
Data Source
AI summary
An integrated circuit device includes: a first fin-type active region and a second fin-type active region that extend on a substrate in a straight line in a first horizontal direction and are adjacent to each other in the first horizontal direction; a fin isolation region arranged between the first fin-type active region and the second fin-type active region on the substrate and including a fin isolation insulation structure extending in a second horizontal direction perpendicular to the first horizontal direction; and a plurality of gate lines extending on the first fin-type active region in the second horizontal direction, wherein a first gate line that is closest to the fin isolation region from among the plurality of gate lines is inclined to be closer to a center of the fin isolation region in the first horizontal direction from a lowermost surface to an uppermost surface of the first gate line.