Inclined Magnetization Memory Layer for Fast Switching
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Solution Overview
Problem
Current spin injection magnetization switching elements using perpendicular magnetization films have longer switching times and require more current, making them less efficient for high-speed and high-density memory applications.
Innovation Solution
A memory apparatus with a layered structure comprising a memory layer, a magnetization-fixed layer, an intermediate non-magnetic layer, and a cap layer, where the memory layer includes a first ferromagnetic layer with in-plane magnetization and a second ferromagnetic layer with perpendicular magnetization, both inclined from the perpendicular direction, allowing for faster magnetization switching with reduced current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If perpendicular magnetization film is used for spin injection magnetization switching, then the magnetization direction can be switched, but the switching time becomes longer
Solution Approach 1:
The memory layer is divided into two separate ferromagnetic layers: one with in-plane magnetization and another with perpendicular magnetization. This segmentation allows each layer to contribute different magnetic properties, enabling faster switching by utilizing the in-plane magnetization layer's response characteristics while maintaining the perpendicular magnetization layer's storage benefits.
Solution Approach 2:
The invention uses a composite magnetic structure combining two ferromagnetic layers with different magnetization orientations (in-plane and perpendicular) separated by a non-magnetic intermediate layer. This composite structure leverages the advantages of both magnetization types to achieve reduced switching time while maintaining non-volatile memory functionality.
2Reliability
If perpendicular magnetization film is used for spin injection magnetization switching, then magnetization switching can be achieved, but more current is required
Solution Approach 1:
The magnetic functionality is segmented between two layers: the in-plane magnetization layer responds more efficiently to spin injection current, requiring less current to initiate switching, while the perpendicular magnetization layer provides stable non-volatile storage. This division reduces the overall current requirement compared to using only perpendicular magnetization.
Solution Approach 2:
The composite structure of two ferromagnetic layers with different magnetization directions creates a system where the in-plane layer acts as a low-current switching mediator, reducing the energy barrier for magnetization reversal while the perpendicular layer maintains data stability, thereby achieving reliable switching with lower current consumption.
3Reliability
If magnetization direction is perpendicular to film face, then non-volatile memory is achieved, but switching time increases
Solution Approach 1:
The memory functionality is segmented into two layers with different magnetization orientations. The perpendicular magnetization layer maintains non-volatile storage capability, while the in-plane magnetization layer provides fast switching response. This segmentation allows simultaneous achievement of non-volatility and fast switching that cannot be obtained with a single perpendicular magnetization layer.
Solution Approach 2:
The composite structure combines perpendicular and in-plane magnetization layers to create a hybrid system where the perpendicular layer ensures non-volatile memory operation while the in-plane layer accelerates the switching process, resolving the contradiction between retention and switching speed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables shorter switching times and reduced variability, allowing for high-speed operation with less current consumption, thereby enhancing the performance and efficiency of memory elements.
Implementation Method 1
the first ferromagnetic layer is magnetically bonded to the second ferromagnetic layer via the bonding layer
Implementation Method 2
Recording is made in the MRAM by switching the magnetization using a current magnetic field, or directly injecting spin-polarized electrons into a recording layer to induce magnetization switching
Data Source
AI summary
A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.