Multi-layer via structure with inclined walls for flexible routing density
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Solution Overview
Problem
Existing multi-layer via structures for flexible semiconductor devices and substrates are not flexible enough and fail to increase routing densities effectively, as they accumulate metal materials in via areas, making them unsuitable for bendable electronic products.
Innovation Solution
A multi-layer via structure with a metal layer, first and second dielectric layers, and corresponding via metal layers featuring inclined walls and overlapping top edges, allowing for thinner, more flexible designs with increased routing density by optimizing the arrangement of metal layers and dielectric coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If stacked via structure is used to increase routing density, then routing density is improved, but flexibility deteriorates due to metal material accumulation in via areas
Solution Approach 1:
The patent transitions from traditional vertical stacked via structures to an inclined via structure that extends diagonally across multiple dielectric layers. This dimensional change allows via metals to connect metal layers across greater vertical distances while occupying less horizontal space, thereby increasing routing density without compromising flexibility. The inclined configuration distributes metal materials more evenly rather than concentrating them in vertical stacks.
Solution Approach 2:
The via structure is divided into multiple segments, with each via metal layer connecting adjacent metal layers in a staggered configuration. Instead of a single continuous vertical via, the connection is segmented across multiple dielectric layers, with each segment inclined at different angles. This segmentation reduces metal material accumulation at any single location and improves overall flexibility while maintaining routing density.
2Length of moving object
If stacked via structure is used to decrease substrate thickness, then thickness is reduced, but flexibility deteriorates due to rigid metal accumulation
Solution Approach 1:
The patent employs inclined via structures that extend diagonally across dielectric layers rather than vertically. This dimensional change allows the via metals to achieve the necessary electrical connections across thin substrates while occupying less vertical space and distributing metal materials more evenly. The inclined configuration reduces the concentration of metal materials that would otherwise create rigid zones, thereby maintaining flexibility even in thinned substrates.
Solution Approach 2:
The via metals are configured with different inclination angles and positions in different regions of the substrate. This local variation in via structure allows optimization of both thickness reduction and flexibility retention in different areas. The staggered arrangement ensures that metal materials are distributed non-uniformly to match the specific routing and flexibility requirements of different substrate regions.
3Reliability
If via metals are concentrated in via areas to connect metal layers, then electrical connection is improved, but flexibility deteriorates due to metal material gathering
Solution Approach 1:
The electrical connection path is segmented into multiple inclined via metal layers, each connecting adjacent metal layers in a staggered configuration. Instead of concentrating all connection functions in a single vertical via, the connection is distributed across multiple segments. This segmentation maintains reliable electrical connectivity while distributing metal materials to preserve flexibility.
Solution Approach 2:
The via metals are arranged in inclined configurations that extend diagonally across dielectric layers rather than vertically. This dimensional change allows the via metals to achieve effective electrical connections across greater vertical distances while occupying less horizontal space. The inclined arrangement distributes metal materials more evenly, reducing local concentration and maintaining flexibility without compromising connection reliability.
Data Source
AI summary
Disclosed is a multi-layer via structure, comprising a metal layer, a first via metal layer formed on a first open of a first dielectric layer and a second via metal layer formed on a second open of a second dielectric layer. The first and second via metal layers comprise first and second bottoms, first and second top portions, first and second inclined walls, respectively. The first and second inclined walls comprise first and second top edges, first and second bottom edges respectively. The second top edge has a point closest to a geometric center of the first bottom. A vertical projection of the point falls on the first inclined wall. Alternatively, a point of the second bottom edge, which is closest to the geometric center, has a vertical projection. The vertical projection is vertical to the metal layer and falls on the first inclined wall.


