Indacene p-Dopants for Low-Absorption Organic Semiconductor Layers

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Solution Overview

Problem

Existing organic semiconductor p-dopants exhibit high absorption coefficients, volatility, unstable evaporation behavior, low thermostability, and high manufacturing costs, leading to inefficiencies and instability in electronic components like OLEDs and solar cells.

Innovation Solution

Development of indacene compounds with specific structural formulas that serve as p-dopants, offering low production costs, versatile doping properties, and high doping efficiency, reducing parasitic absorption, and enhancing conductivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If known p-dopants (TCNQ, F4TCNQ, HATNA, metal oxides, radialene compounds) are used for doping organic semiconductors, then the semiconductor conductivity is improved, but the absorption coefficient becomes too high, causing unwanted reduction of efficiency in light-emitting and light-converting components

Engineering Contradiction:
Improvesemiconductor conductivityVSAvoidabsorption coefficient
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the chemical structure parameters of the dopant by introducing indacene core with specific substituents (cyano, fluoro, chloro groups) to achieve optimal balance between electron affinity and optical properties. This structural parameter optimization reduces the absorption coefficient while maintaining effective p-doping capability, resolving the contradiction between conductivity improvement and absorption reduction.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite molecular structures combining indacene core with various electron-withdrawing groups (cyano, fluoro, chloro) to create dopants that integrate multiple functions: high electron affinity for effective doping, reduced absorption coefficient for optical compatibility, and enhanced thermostability. This composite approach allows simultaneous optimization of electrical and optical properties.

Inventive Principle:
Principle #40Composite materials

2Reliability

If known p-dopants are used for doping organic semiconductors, then the conductivity is enhanced, but the evaporation behavior becomes unstable and thermostability is reduced, resulting in undesired irregularities in component performance

Engineering Contradiction:
Improvesemiconductor conductivityVSAvoidevaporation behavior stability
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent optimizes molecular weight and structural rigidity parameters of the dopant by using indacene core with aromatic substituents. This increases thermostability and reduces volatility, ensuring stable evaporation behavior during vacuum deposition while maintaining effective doping capability. The structural parameters are tuned to achieve the right balance between stability and doping efficiency.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates composite molecular structures that integrate rigid aromatic systems (indacene, naphthalene, anthracene) with electron-withdrawing groups. This composite structure provides both thermal stability for reliable evaporation and sufficient electron affinity for effective p-doping, resolving the contradiction between conductivity enhancement and evaporation stability.

Inventive Principle:
Principle #40Composite materials

3Reliability

If known p-dopants are used for doping organic semiconductors, then the doping effect is achieved, but the manufacturing costs become very high

Engineering Contradiction:
Improvedoping effectVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent employs indacene-based structures that can be synthesized through cost-effective routes using readily available starting materials and standard organic synthesis techniques. The molecular design avoids rare metals or complex multi-step syntheses, making the dopants economically viable for large-scale production while maintaining effective doping performance.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The patent optimizes the synthesis complexity parameter by designing dopants with modular structures that can be assembled from common building blocks. The indacene core with simple substituents (cyano, fluoro, chloro) allows for straightforward synthesis with high yields, reducing manufacturing costs while achieving the required doping effect.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The indacene compounds provide improved conductivity, stability, and reduced absorption in visible and near-infrared ranges, enabling reproducible production of organic electronic components with enhanced performance.

Implementation Method 1

For p-doping, strong electron acceptors (p-dopants) are used to remove an electron from the HOMO (highest occupied molecular orbital) of the semiconductor matrix (p-doping), leaving a hole.

Methodology Applied
Scientific EffectElectron transfer: Redox Reactions

Data Source

PatentEP4646085A1Indacene compounds and the use thereof
Publication Date: 2025.11.05 CREDOXYS GMBH
  • EP4646085A1 patent drawingFigure 1
  • EP4646085A1 patent drawing
  • EP4646085A1 patent drawing

AI summary

The present invention relates to compounds of formula (I) as well as to their use as organic doping agent, as transport layer, as hole injection layer, as organic semiconductor itself, or as hole transport layer. The invention also relates to organic semiconductive materials, electronic components, semiconductor units, and doped semiconductor layers in which the compounds of formula (I) are used as well as to a method do prepare such a doped semiconductor layer.