Indexing Patterns for Hybridized Infrared Detector Alignment

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Solution Overview

Problem

Existing infrared detectors with hybridized components face alignment issues when adding additional technological levels like filters or metal meshes directly on the incident surface, as current techniques are inadequate for wavelengths above 1.7 micrometers, leading to inconsistent radiation reception across photosites and compromised signal quality.

Innovation Solution

The method involves forming indexing patterns, such as through vias or raised areas, on the growth substrate of the detection circuit outside the active area to facilitate precise alignment of additional technological levels, using techniques like photolithography and etching to achieve sub-micrometer accuracy during flip-chip bonding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If optical filters or additional technological levels are placed directly on the incident surface of hybridized infrared detectors, then the functionalization of individual photosites is improved, but alignment precision deteriorates due to the inability to achieve sub-micrometer accuracy with conventional techniques

Engineering Contradiction:
Improvefunctionalization of individual photositesVSAvoidalignment precision
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

Alignment marks are formed on the detection circuit before hybridization with the readout circuit. This preliminary formation of reference features enables subsequent precise alignment of optical filters or additional technological levels on individual photosites, achieving the required sub-micrometer accuracy that conventional alignment techniques cannot provide.

Inventive Principle:
Principle #10Preliminary action

2Device complexity

If conventional alignment techniques are used for infrared detectors with cut-off wavelengths above 1.7 micrometers, then the device complexity is reduced, but measurement precision deteriorates because usual techniques cannot be used at these wavelengths

Engineering Contradiction:
Improvealignment system complexityVSAvoidalignment measurement precision
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

Alignment marks serve as intermediary reference features that enable precise alignment without requiring complex alignment systems operating at infrared wavelengths. These marks provide a common reference framework that simplifies the alignment process while achieving high precision, avoiding the need for specialized infrared alignment equipment.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Device complexity

If additional technological levels are added on the incident surface without precise alignment, then the device complexity increases, but signal quality deteriorates due to inconsistent radiation reception across photosites

Engineering Contradiction:
Improvedevice structure complexityVSAvoidsignal quality
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

Alignment marks are formed in advance on the detection circuit to establish precise reference positions before adding optical filters or other technological levels. This preliminary alignment framework ensures that subsequent layers are correctly positioned over individual photosites, maintaining consistent radiation reception and high signal quality while allowing for the necessary device complexity.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures accurate alignment of filters or metal meshes relative to each photosite, enhancing the detection quality by ensuring uniform radiation reception across the array, thereby improving the signal quality and resolving the alignment challenges in infrared detectors with high cut-off wavelengths.

Implementation Method 1

detection circuit comprising an array network of photosensitive sites for a wavelength range of interest

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 2

the latter resulting from the epitaxial growth of a detection material from said substrate

Methodology Applied
Scientific EffectEpitaxy: Epitaxy

Data Source

PatentUS9922933B2Method of positioning elements, particularly optical elements, on the back side of a hybridized-type infrared detector
Publication Date: 2018.03.20 DE DETECTEURS INFRAROUGES - SOFRADIR
  • US9922933B2 patent drawing
  • US9922933B2 patent drawing
  • US9922933B2 patent drawing

AI summary

A method of positioning elements or additional technological levels on the incident surface of an infrared detector of hybridized type, said detector being formed of a detection circuit comprising an array network of photosensitive sites for the wavelength ranges of interest, hybridized on a read circuit, said detection circuit resulting from the epitaxial growth of a detection material on a substrate, comprising forming within the detection circuit indexing patterns by marking of the growth substrate.