Indirect Doping of 2D Semiconductors via Ion Diffusion
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Solution Overview
Problem
It is challenging to dope 2-dimensional semiconductors and organic semiconductors, such as graphene, with impurities using the ion injection method due to their inherent properties.
Innovation Solution
A method involving the formation of a semiconductor or insulating layer on a substrate, followed by ion implantation and subsequent annealing to diffuse the ions into a doped layer, allowing for the creation of a doped 2-dimensional or organic semiconductor layer, which can be used in flexible switching devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ion injection method is used to dope 2-dimensional semiconductor, then doping can be achieved, but it is generally difficult to use this method due to inherent properties of the material
Solution Approach 1:
The patent uses a semiconductor layer as an intermediary medium. Ions are first implanted into the semiconductor layer, then through thermal annealing, the ions diffuse from the semiconductor layer into the 2-dimensional semiconductor layer. This intermediary approach avoids direct ion injection into the 2-dimensional semiconductor while achieving stable doping.
Solution Approach 2:
The patent performs preliminary ion implantation into the semiconductor layer before transferring the doping effect to the 2-dimensional semiconductor layer. The semiconductor layer is prepared in advance with implanted ions, then thermal annealing enables the ions to diffuse into the target 2-dimensional semiconductor layer.
2Manufacturing precision
If direct ion implantation is performed on 2-dimensional semiconductor, then doping can be achieved, but the inherent properties of 2-dimensional semiconductor make this difficult
Solution Approach 1:
The semiconductor layer serves as a mediator that facilitates controlled doping. By implanting ions into the semiconductor layer first and then using thermal diffusion to transfer dopants to the 2-dimensional semiconductor layer, the process achieves precise doping control without the technical difficulties of direct implantation.
3Adaptability or versatility
If p-type doping is achieved by reacting with air, then doping is easy, but n-type doping is also required for semiconductor integrated circuits
Solution Approach 1:
The patent changes the parameter of dopant type by selecting different ion species for implantation into the semiconductor layer. By controlling the type of ions implanted (e.g., boron for p-type, phosphorus for n-type), the method can achieve both p-type and n-type doping of 2-dimensional semiconductors, providing versatility for integrated circuit fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables stable and indirect doping of 2-dimensional and organic semiconductors, facilitating their use in flexible electronic devices by creating a doped layer that can function as a channel in transistors, overcoming the difficulty of direct impurity implantation.
Implementation Method 1
doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing of the substrate
Implementation Method 2
annealing the substrate in a furnace at a temperature in a range from about 300° C. to about 600° C. under a nitrogen atmosphere
Implementation Method 3
annealing the substrate in a furnace that is maintained at a temperature in a range from about 300° C. to about 600° C.
Implementation Method 4
implanting ions into the semiconductor layer
Data Source
AI summary
Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.