Indium Compound ALD Deposition for Uniform Flexible-Substrate Films
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for forming indium-containing films, such as ITO and IGZO, face challenges in achieving uniform thickness on uneven surfaces and are incompatible with flexible organic substrates due to high vacuum requirements, and current indium compounds used in CVD or ALD processes are unstable and require complex pretreatment or low throughput.
Innovation Solution
The use of indium compounds with a cyclopentadienyl group and hydrocarbon substituents, which are stable at ambient temperatures and can be used in ALD processes at high temperatures, allowing for high-quality film formation with high growth per cycle (GPC) and broad ALD window, without the need for high vacuum.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sputtering is used to form indium-containing films, then electrical conductivity and transparency are achieved, but uniform thickness cannot be formed on uneven surfaces and high vacuum is required which is incompatible with flexible organic substrates
Solution Approach 1:
The patent replaces the mechanical sputtering process with a chemical vapor deposition (CVD) process using liquid indium compounds. This substitution eliminates the need for high vacuum conditions, enabling the formation of indium-containing films on flexible organic substrates while maintaining film uniformity and quality through chemical reactions rather than physical bombardment.
Solution Approach 2:
The patent changes the operating parameters from high vacuum (1 Pa or less) to atmospheric or low-pressure conditions. By using liquid indium compounds as precursors and controlling temperature and pressure parameters, the process achieves film formation without requiring high vacuum, thus expanding substrate compatibility to include flexible organics.
2Ease of operation
If liquid indium compounds are used in CVD or ALD processes, then ease of supply and uniform vapor concentration are improved, but the compounds are unstable and require complex pretreatment
Solution Approach 1:
The patent performs preliminary stabilization treatment of the liquid indium compound by reacting it with oxygen-containing gas before film formation. This pre-treatment oxidizes the compound to form a stable indium oxide precursor that can be reliably deposited without further complex processing, eliminating the need for multiple pretreatment steps while maintaining ease of supply.
3Manufacturing precision
If conventional indium compounds are used in ALD processes, then film formation is possible, but growth per cycle is low and throughput is reduced
Solution Approach 1:
The patent optimizes the ALD process parameters by using liquid indium compounds with specific physical properties (melting point below 80°C) and controlling temperature, pressure, and reactant flow rates. These parameter changes enable high growth per cycle (GPC) while maintaining film quality, significantly improving throughput without sacrificing manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-quality indium-containing films with low impurities and high throughput, suitable for various substrates, including flexible organic materials, by employing indium compounds that are stable and easily handled, even at elevated temperatures.
Implementation Method 1
research is underway into indium materials for forming indium-containing films by chemical vapor deposition (CVD) or atomic layer deposition (ALD)
Implementation Method 2
from the point of view of ease of supply and ease of supplying vapor at a uniform concentration, liquid materials rather than solid materials are ideal as materials employed in film-making processes
Data Source
AI summary
A process for forming an indium-containing film on at least part of the surface of a substrate, the process comprising (a) placing a substrate into a chamber; (b) introducing a vapor that includes an indium-containing compound into the chamber; (c) purging the chamber with a first purge gas; (d) introducing an oxygen-containing gas into the chamber; and (e) purging the chamber with a second purge gas; and (f) repeating steps (b)-(e) at a temperature of ≥225° C. and ≤400° C. until a desired thickness of the indium-containing film is obtained.