Light-Emitting Semiconductor Stack With Indium-Graded Barrier Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in achieving optimal light-emitting efficiency and reliability due to limitations in the design of their active regions, particularly in the indium content percentages of well and barrier layers, which affect surface recombination and photoelectric conversion efficiency.
Innovation Solution
The semiconductor device incorporates a light-emitting region with multiple semiconductor stacks, each comprising a well layer and a barrier layer made from group III-V semiconductor materials with varying indium content percentages, where the barrier layer has a lower indium content than the well layer, optimizing lattice mismatch and reducing surface recombination to enhance external quantum efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the indium content in the well layer and barrier layer is increased to improve light-emitting efficiency, then the photoelectric conversion efficiency is improved, but the lattice mismatch increases causing more surface recombination and stress
Solution Approach 1:
The patent applies local quality by creating distinct indium content gradients in different layers: the well layer has higher indium content (5-15%) for optimal light emission, while the barrier layer has lower indium content (0-5%) to reduce lattice mismatch. This spatial variation in material composition allows each layer to perform its specific function optimally without compromising overall device reliability
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the indium content percentage in different semiconductor layers. By adjusting the indium concentration parameter in the well layer versus the barrier layer, the patent optimizes both light-emitting efficiency and lattice matching, thereby resolving the contradiction between productivity and reliability
2Illumination intensity
If the indium content in the well layer is increased to enhance brightness, then the photoelectric conversion efficiency improves, but the stress in the epitaxial structure increases
Solution Approach 1:
The patent implements local quality by concentrating higher indium content (5-15%) specifically in the well layer where light emission occurs, while maintaining lower indium content (0-5%) in the barrier layer. This localized high-indium region provides enhanced brightness without subjecting the entire epitaxial structure to excessive stress
Solution Approach 2:
The patent employs composite materials by combining different group III-V semiconductor compounds with varying indium content in the well layer and barrier layer. This composite structure allows the high-indium well layer to generate bright light while the low-indium barrier layer provides mechanical stability and stress relief in the epitaxial structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves the external quantum efficiency and brightness of the semiconductor device by reducing surface recombination and stress in the epitaxial structure, leading to higher photoelectric conversion efficiency and narrower half-maximum width.
Implementation Method 1
optimizing lattice mismatch and reducing surface recombination to enhance external quantum efficiency
Data Source
AI summary
A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The active region is located between the first semiconductor structure and the second semiconductor structure. The active region includes a light-emitting region having N pair(s) of semiconductor stack(s). Each of the semiconductor stack includes a well layer and a barrier layer, in which N is a positive integer greater than or equal to 1. The well layer includes a first group III-V semiconductor material including indium with a first percentage of indium content. The barrier layer includes a second group III-V semiconductor material including indium with a second percentage of indium content. The first group III-V semiconductor material and the second group III-V semiconductor material further includes phosphorus. The second percentage of indium content is less than the first percentage of indium content.