Indium Halogen Alkoxide Layers for High Mobility

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Solution Overview

Problem

Existing methods for producing indium oxide-containing layers via printing processes face challenges such as colloidal instability in particle approaches and poor semiconducting properties when using indium alkoxides, while halogen-containing precursors were assumed to result in reduced layer quality.

Innovation Solution

A liquid-phase process using indium halogen alkoxides as precursors, where the coating composition is applied to a substrate, irradiated with electromagnetic radiation in specific wavelength ranges, and then thermally converted to form indium oxide-containing layers, achieving better electrical properties and homogeneity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If indium alkoxides are used as precursors in printing processes, then the process is simpler and lower temperature processing is enabled, but the resulting layers have poor semiconducting properties and low charge carrier mobility

Engineering Contradiction:
Improveprocessing simplicity and temperatureVSAvoidcharge carrier mobility
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The invention changes the chemical composition parameter of the precursor from indium alkoxide to indium halogen alkoxide. This parameter change enables the formation of layers with significantly improved charge carrier mobility (up to 50 cm²/Vs) while maintaining the benefits of solution processing and low temperature fabrication, thus resolving the contradiction between ease of manufacture and manufacturing precision

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses composite precursor molecules that combine indium with halogen and alkoxide groups (InX(OR)2 where X=F, Cl, Br, I). This composite structure allows the precursor to decompose and form high-quality indium oxide layers with excellent semiconducting properties, overcoming the limitations of simple indium alkoxides while retaining solution processability

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If particle approaches are used for producing indium oxide layers, then the layers can be formed through printing processes, but colloidal instability requires dispersing additives that worsen layer properties

Engineering Contradiction:
Improveprinting process capabilityVSAvoidlayer quality and homogeneity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The invention extracts and eliminates the need for dispersing additives by switching from a particle-based approach to a molecular precursor approach. The indium halogen alkoxide precursors are molecular compounds that dissolve uniformly in solution without requiring colloidal stabilization, thus removing the source of inhomogeneities and improving layer quality while maintaining printing process capability

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The invention uses indium halogen alkoxide molecules as intermediary compounds that bridge the gap between solution processing and high-quality indium oxide layer formation. These molecular intermediaries decompose cleanly during thermal processing to form homogeneous layers without the defects introduced by particle-based methods

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If halogen-containing precursors are used, then better electrical properties and homogeneity are achieved, but it was previously assumed that layer quality would be reduced

Engineering Contradiction:
Improveelectrical properties and homogeneityVSAvoidlayer quality
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The invention inverts the conventional wisdom by demonstrating that halogen-containing precursors (indium halogen alkoxides) actually improve rather than degrade layer quality. The halogen atoms facilitate cleaner decomposition and more uniform layer formation, leading to superior electrical properties and homogeneity, thus reversing the previously held assumption about halogen detrimental effects

Inventive Principle:
Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This process results in indium oxide layers with improved field-effect mobility and homogeneity, overcoming previous limitations in layer quality and production methods, particularly when using indium chlorine dialkoxides instead of indium alkoxides.

Implementation Method 1

the composition applied to the substrate is irradiated with electromagnetic radiation

Methodology Applied
Scientific EffectPhotodissociation: Photodissociation

Implementation Method 2

converted thermally into an indium oxide-containing layer

Methodology Applied
Scientific EffectThermal decomposition: Pyrolysis

Data Source

PatentUS8859332B2Process for producing indium oxide-containing layers
Publication Date: 2014.10.14 EVONIK OPERATIONS GMBH
  • US8859332B2 patent drawing
  • US8859332B2 patent drawing

AI summary

The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.