Indium-Modified Insulating Interface for Oxide Semiconductor Stability
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Solution Overview
Problem
Oxygen vacancies in oxide semiconductor films used for transistor channels lead to adverse effects on electrical characteristics, such as shifts in threshold voltage and fluctuations in transistor performance, due to hydrogen bonding and carrier generation.
Innovation Solution
Incorporating a layer structure with insulating films that include oxygen and silicon, and nitrogen and silicon, and introducing indium near the interface, to manage oxygen vacancies by releasing excess oxygen and filling vacancies in the oxide semiconductor film, thereby stabilizing the transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If an oxide semiconductor film is used for a transistor channel region, then the transistor can be manufactured with potential low power consumption, but oxygen vacancies form in the channel region which cause shifts in threshold voltage and fluctuations in electrical characteristics
Solution Approach 1:
An insulating film releasing oxygen is formed as a base insulating layer before forming the oxide semiconductor layer. This preliminary oxygen release prepares the structure to compensate for oxygen vacancies that will form during subsequent heating processes, preventing threshold voltage shifts and maintaining electrical characteristic stability while enabling low power consumption operation
Solution Approach 2:
The patent controls the oxygen release characteristics of the base insulating layer by selecting materials and adjusting formation conditions. This parameter control ensures that oxygen is released at appropriate temperatures to fill vacancies without causing other degradation, balancing power efficiency with electrical stability
2Reliability
If oxygen vacancy in the oxide semiconductor layer is reduced by using an insulating film that releases oxygen, then electrical characteristic stability improves, but the device structure and manufacturing process become more complex
Solution Approach 1:
The base insulating layer performs multiple functions: it serves as the foundation for the oxide semiconductor layer, releases oxygen to fill vacancies, and can be integrated with other circuit elements. This multi-functionality reduces the need for additional dedicated layers, managing structural complexity while maintaining electrical stability
Solution Approach 2:
By adjusting the composition and formation parameters of the base insulating layer, the patent optimizes oxygen release characteristics to achieve the desired effect with minimal additional processing steps, balancing reliability improvement with manufacturing simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces oxygen vacancies, improves the reliability and stability of semiconductor devices by minimizing changes in electrical characteristics and enhancing power efficiency.
Implementation Method 1
an insulating film which releases oxygen by heating is used as a base insulating layer of the oxide semiconductor layer
Data Source
AI summary
A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.