Indium Metal Oxide Semiconductor Layer Composition for Display Devices
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving favorable electrical characteristics, reliability, and stability, particularly in display devices where high field-effect mobility is required.
Innovation Solution
A semiconductor device is designed with a specific composition of indium, oxygen, and optional elements like gallium, aluminum, yttrium, and tin, within a defined range in a ternary diagram, and a stacked-layer structure of metal oxide films with varying crystallinity, along with a conductive layer structure and insulating layers to enhance reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal oxide semiconductor layer is used to achieve high field-effect mobility, then electrical performance is improved, but composition control and manufacturing precision are required to ensure stability and reliability
Solution Approach 1:
The patent specifies precise compositional parameters for the metal oxide semiconductor layer, defining atomic ratio ranges of In:M:Zn (where M is Ga, Al, Y, or Sn) to optimize electrical characteristics. By establishing specific parameter ranges rather than fixed values, the invention achieves reliable electrical performance while providing manufacturing flexibility within those ranges.
Solution Approach 2:
The patent employs composite metal oxide materials combining multiple elements (In, M, Zn, and O) to achieve superior electrical characteristics. The composite structure allows synergistic effects where each element contributes specific properties: In provides high mobility, M (Ga/Al/Y/Sn) enhances stability and band gap control, and Zn improves crystallinity and reduces oxygen vacancies.
2Reliability
If indium proportion is increased to improve field-effect mobility, then electrical performance is enhanced, but composition complexity and manufacturing difficulty increase
Solution Approach 1:
The patent optimizes the local composition by positioning indium at specific atomic ratios within the semiconductor layer to maximize mobility contribution. The composition is designed with In predominating over M and Zn combined, ensuring high mobility while maintaining manageable complexity through defined proportionality rather than arbitrary mixing.
Solution Approach 2:
The invention establishes a specific parameter range where indium proportion is optimized (In:M:Zn atomic ratio where In > M+Zn) to achieve high field-effect mobility. This parameter specification balances performance enhancement with manufacturing feasibility by providing clear compositional guidance rather than requiring complex multi-element optimization.
3Reliability
If multiple elements (In, M, Zn) are combined to optimize electrical characteristics, then device performance is improved, but manufacturing precision and composition control become more difficult
Solution Approach 1:
The patent defines a specific compositional parameter space (In:M:Zn atomic ratios) that optimizes electrical characteristics while simplifying manufacturing. The key parameter relationship (In > M+Zn) provides a clear control target for manufacturers, reducing the complexity of multi-element composition control by establishing hierarchical proportionality rather than requiring precise control of all individual ratios simultaneously.
Solution Approach 2:
The invention uses a composite metal oxide system (In-M-Zn-O) where the synergistic interaction between elements achieves superior electrical properties. The composite structure naturally stabilizes the composition through thermodynamic preferences and crystallization behavior, reducing manufacturing precision requirements compared to simpler single-element systems that lack these self-stabilizing mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves stable and favorable electrical characteristics, high reliability, and high field-effect mobility, enabling the development of reliable display devices with improved performance.
Implementation Method 1
A metal oxide that can be used for a semiconductor layer can be formed by a sputtering method
Data Source
AI summary
A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device includes a first conductive layer, a first insulating layer, a semiconductor layer, and a pair of second conductive layers. The first insulating layer is in contact with a top surface of the first conductive layer. The semiconductor layer is in contact with a top surface of the first insulating layer. The pair of second conductive layers are in contact with a top surface of the semiconductor layer. The pair of second conductive layers are apart from each other in a region overlapping with the first conductive layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.