Indium Oxide Semiconductor Layer on Metallic Particles

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Solution Overview

Problem

Current photocatalysts in composite materials for photocatalysis applications do not achieve optimal photocatalytic performance due to limitations in the design and composition of semiconductor support structures.

Innovation Solution

A composite material is developed with a first semiconductor (SC1) in direct contact with metallic particles, where a second semiconductor (SC2) comprising indium oxide covers at least 50% of the metallic particles' surface, forming a core-layer structure, enhancing photocatalytic performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional semiconductor support structures are used in photocatalysts, then the structure is simple and easy to manufacture, but the photocatalytic performance is not optimal

Engineering Contradiction:
Improvephotocatalytic performanceVSAvoidcomposite structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies the nested doll principle by creating a core-layer structure where metallic particles are embedded within a semiconductor matrix. The metallic particles form the core, while the semiconductor material forms the outer layer, creating a nested configuration that maximizes the utilization of both materials for enhanced photocatalytic activity while maintaining structural integrity

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent employs composite materials by combining metallic particles with semiconductor materials to create a hybrid photocatalyst. This composite structure leverages the unique properties of both materials - the metallic particles provide plasmonic effects and electron sinks, while the semiconductor provides light absorption and charge carrier generation, resulting in synergistic enhancement of photocatalytic performance

Inventive Principle:
Principle #40Composite materials

2Reliability

If the second semiconductor layer covers more of the metallic particles' surface, then the photocatalytic performance improves, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvephotocatalytic performanceVSAvoidcoverage rate control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by optimizing the coverage rate of the semiconductor layer over the metallic particles to a specific range (50-80%). This parameter optimization balances the competing requirements: sufficient coverage to protect metallic particles and provide active sites, while maintaining enough metallic surface exposure to preserve plasmonic effects and electron sink functionality, thereby achieving enhanced photocatalytic performance without excessive manufacturing complexity

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of indium oxide as the second semiconductor significantly improves photocatalytic performance by increasing the coverage rate and efficiency in photocatalytic processes, such as the degradation of organic compounds.

Implementation Method 1

the suspension is irradiated by an irradiation source such that at least a portion of the emission spectrum of said source consists of photons with energies exceeding the band gap of the semiconductor SC1

Methodology Applied
Scientific EffectPhotons with energies exceeding the band gap: Photoelectric Effect

Implementation Method 2

a basic agent is then introduced under stirring and irradiation from said irradiation source to induce the precipitation of indium oxide

Methodology Applied
Scientific EffectPrecipitation: Precipitation

Data Source

PatentEP3206789B1Photocatalytic composition comprising metallic particles and two semiconductors, one of which is composed of indium oxide
Publication Date: 2019.02.20 IFP ENERGIES NOUVELLES

AI summary

The invention relates to a composition containing a first semiconductor SC1, particles comprising one or more metallic-state elements M selected from elements of groups IVB, VB, VIB, VIIB, VIIIB, IB, MB, NIA, IVA and VA of the periodic table, and a second semiconductor SC2 comprising indium oxide, wherein said first semiconductor SC1 is in direct contact with said particles comprising one or more metallic-state elements M, said particles being in direct contact with said second semiconductor SC2 comprising indium oxide, such that the second semiconductor SC2 covers at least 50% of the surface of the particles comprising one or more metallic-state elements M. The invention also relates to the method for preparing same and the use thereof in photocatalysis.