Indium Oxide Microwave Treatment for VoH Defect Reduction
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability, favorable electrical characteristics, high on-state current, miniaturization, and low power consumption, particularly due to issues with hydrogen-related defects in metal oxide transistors.
Innovation Solution
A manufacturing method involving the formation of a metal oxide containing indium, followed by microwave treatment under reduced oxygen pressure to separate hydrogen from oxygen vacancies, and subsequent heat treatment to reduce oxygen vacancies and diffuse hydrogen to conductors, thereby improving the semiconductor device's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If microwave treatment is performed to separate hydrogen from oxygen vacancies, then hydrogen-related defects are reduced and reliability is improved, but treatment time and process complexity increase
Solution Approach 1:
The patent applies preliminary action by performing microwave treatment at a specific stage in the manufacturing process - after metal oxide film formation but before transistor operation. This timing ensures hydrogen is removed from oxygen vacancies before the device is put into service, preventing reliability issues from developing during operation. The treatment is strategically positioned to address defects proactively rather than reactively.
2Reliability
If heat treatment is performed to reduce oxygen vacancies, then electrical characteristics are improved, but energy consumption and processing time increase
Solution Approach 1:
The patent applies parameter changes by utilizing microwave radiation to alter the energy state of the metal oxide film during treatment. The microwave energy creates a non-thermal or low-thermal effect that enables hydrogen separation from oxygen vacancies without requiring high temperatures. This changes the treatment parameter from thermal energy (heat treatment) to electromagnetic energy (microwave treatment), reducing overall energy consumption while achieving the same defect reduction goal.
3Reliability
If multiple treatment steps are performed to reduce defects, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies merging by combining the functions of hydrogen removal and oxygen vacancy reduction into a single microwave treatment step. Rather than performing separate treatments for each defect type, the microwave treatment simultaneously addresses both issues through the generation of oxygen radicals that can both separate hydrogen from vacancies and fill the vacancies themselves. This reduces the number of manufacturing steps while maintaining comprehensive defect reduction.
4Reliability
If hydrogen is diffused to conductors through heat treatment, then hydrogen-related defects are reduced, but diffusion control becomes more difficult
Solution Approach 1:
The patent applies mechanics substitution by replacing thermal diffusion (heat-driven atomic movement) with microwave-induced plasma diffusion. Instead of relying on thermally activated hydrogen migration through the metal oxide film, the microwave treatment generates oxygen radicals that chemically interact with hydrogen at oxygen vacancy sites. This substitution of the diffusion mechanism provides more precise control over hydrogen removal, as the radical-based process is less dependent on temperature gradients and more controllable through microwave power and duration parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the reliability and electrical characteristics of semiconductor devices by reducing hydrogen-related defects, enabling high on-state current and low power consumption while allowing for miniaturization and high integration.
Implementation Method 1
performing microwave treatment from above the metal oxide. The second step is performed using a gas containing oxygen under reduced pressure
Implementation Method 2
By the second step, a defect in which hydrogen has entered an oxygen vacancy (VoH) in the metal oxide is divided into an oxygen vacancy (Vo) and hydrogen (H)
Implementation Method 3
performing heat treatment on the metal oxide. The third step is performed under reduced pressure. By the third step, oxygen vacancies (Vo) in the metal oxide are reduced
Implementation Method 4
hydrogen (H) in the metal oxide is diffused to the first conductor and the second conductor
Data Source
AI summary
A semiconductor device with high reliability is provided. A first step of forming a metal oxide containing indium over a substrate and a second step of performing microwave treatment from above the metal oxide are included. The first step is performed by a sputtering method using an oxide target containing indium. The second step is performed using a gas containing oxygen under reduced pressure, and by the second step, a defect in which hydrogen has entered an oxygen vacancy (VoH) in the metal oxide is divided into an oxygen vacancy (Vo) and hydrogen (H).