Indium Precursor for Uniform Thin Film Deposition
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Solution Overview
Problem
Existing indium precursor compounds face challenges in achieving uniform thin film deposition due to limitations in vapor pressure control and thermal stability, leading to non-uniform film properties and low productivity.
Innovation Solution
A novel indium precursor compound with a specific chemical formula, exhibiting high volatility, excellent thermal stability, and storage stability, is developed. This compound maintains constant vapor pressure during deposition, ensuring uniform thin film formation and increased deposition rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional solid indium precursors are used in chemical vapor deposition, then the deposition process can be performed, but vapor pressure control is limited and film quality reproducibility is poor
Solution Approach 1:
The patent changes the physical state parameter of the indium precursor from solid to liquid form. This fundamental parameter change enables precise vapor pressure control through temperature regulation, directly resolving the contradiction between film quality reproducibility and ease of operation. The liquid precursor allows continuous adjustment of deposition rate via temperature control, achieving both reproducible film quality and operational ease.
Solution Approach 2:
The patent uses a composite organic indium compound structure combining indium center with organic ligands (such as cyclopentadienyl and alkyl groups). This composite material design provides both the necessary volatility for vapor deposition and thermal stability for high-quality film formation, resolving the contradiction between vapor pressure control and film quality.
2Productivity
If high deposition rate is achieved, then productivity increases, but thermal stability and storage stability may be compromised
Solution Approach 1:
The patent optimizes the molecular structure parameters of the indium precursor by selecting specific ligands (cyclopentadienyl, alkyl groups) that balance volatility and thermal stability. The liquid state at room temperature provides inherent volatility for high deposition rates, while the stable organic ligand framework ensures thermal and storage stability, resolving the contradiction between productivity and reliability.
Solution Approach 2:
The composite organic-indium molecular structure combines the volatility benefits of organic compounds with the stability of coordinated metal centers. The specific ligand design creates a material that decomposes at controlled temperatures, enabling high deposition rates while maintaining stability during storage and handling.
3Manufacturing precision
If uniform thin film is formed by maintaining constant vapor pressure, then manufacturing precision improves, but process complexity increases
Solution Approach 1:
The liquid indium precursor exhibits self-regulating vapor pressure characteristics where temperature directly controls vapor pressure in a predictable manner. This self-service property eliminates the need for complex vapor pressure control systems, achieving uniform thin film formation through simple temperature control and reducing process complexity while maintaining high manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The indium precursor compound enables the formation of uniform thin films with improved thermal stability and storage stability, enhancing productivity through increased deposition rates and efficient vapor pressure control.
Implementation Method 1
exhibiting a constant vapor pressure during a deposition process
Implementation Method 2
most indium (In) precursors are thermally decomposed under high-temperature conditions (250° C. or higher)
Data Source
AI summary
The present invention relates to an indium precursor compound, a method of preparing a thin film using the same, and a board prepared using the same. More particularly, the present invention relates to an indium precursor compound represented by Chemical Formula 1, a method of preparing a thin film using the same, and a board prepared using the same.According to the present invention, a uniform thin film may be formed, productivity may be increased due to an increased deposition rate, thermal stability and storage stability may be excellent, and an effect of easy handling may be obtained.